Integration of amorphous diodes with a fully depleted silicon on isolator (FD SOI) MOSFET circuit is first presented in this paper. In addition we present a very simple circuit fabricated in SOI, which when integrated with an amorphous silicon photodiode significantly improves the detection of current variation through the diode, when it is illuminated. The circuit takes advantage of the better...

A novel soft-switching two-switch flyback converter is proposed in this paper. This converter is composed of two active power switches, a flyback transformer, a blocking diode, and two passive regenerative clamping circuits. The proposed converter has the advantages of a low cost circuit configuration, a simple control scheme, a high efficiency, and a wide operating range. The circuit topology,...

Tfds paper explores, experimentally and theoretically, the problem of minimizing secondand third-order intermodulation distortion in diode mixers. A numerical technique is presented which can be used to cakulate internrodulation levels with unprecedented accuracy, and it is used to identify circuit and diode parameters which maximize dynamic range. It is shown that intermorhdation dktortion is ...

A simple fourth-order hyperchaotic circuit with damped harmonic oscillators is described. ANP3 and PSpice simulations including an eigenvalue study of the linearized Jacobian are presented together with a hardware implementation. The circuit contains two inductors with series resistance. two ideal capacitors and one non-linear active conductor. The Lyapunov exponents are presented to confirm th...

The Coach6 software and the CoachLabII+ measuring console coupled with a computer equipped appropriate voltage current sensors were used to determine current-voltage power-voltage characteristics of photovoltaic cells. for single cell cells connected in series parallel tested depending on light intensity. Using simplified theoretical model based one-diode equivalent circuit Shockley diode equat...

In this article, a two-atom-thick diode based on 2-D materials is presented for microwave detection. The consists of molybdenum disulfide monolayer/graphene monolayer heterojunction transferred onto silicon/silicon dioxide substrate and patterned by means nanolithography techniques to obtain geometrical self-switching diode. interaction between the two monolayers gives rise double-stage device,...

Many of the emerging broadband wireless access systems operate at mm-wave frequencies where large allocations of spectrum are available. GaAs Monolithic Microwave Integrated Circuits (MMICs) offer a means of realising low cost, high performance, high volume, reproducible mm-wave components. This paper details two Single Pole 4 Throw (SP4T) switch MMICs covering 24 to 34GHz and 34 to 45GHz. The ...

In this paper, we propose an analytical approach for the small-signal response of nanometric InGaAs diode which is extracted to the transistor model in ref [1] when the gate is taking away. The exploitation of the small-signal equivalent circuit elements such as the admittance parameters can give significant information about the noise level of the devices by using the Nyquist relation. The ana...

During quench tests in 2011 variations in resistance of an order of magnitude were found in the diode by-pass circuit of the main LHC magnets. An investigation campaign was started to understand the source, the occurrence and the impact of the high resistances. Many tests were performed offline in the SM18 test facility with a focus on the contact resistance of the diode to heat sink contact an...