We measure the high-frequency emission of a single Cooper pair transistor (SCPT) in the regime where transport is only due to tunneling of Cooper pairs. This is achieved by coupling on chip the SCPT to a superconductor-insulator-superconductor junction and by measuring the photon assisted tunneling current of quasiparticles across the junction. This technique allows a direct detection of the ac...

A detailed study on the mechanism of band-to-band tunneling in carbon nanotube field-effect transistors (CNFETs) is presented. Through a dual-gated CNFET structure tunneling currents from the valence into the conduction band and vice versa can be enabled or disabled by changing the gate potential. Different from a conventional device where the Fermi distribution ultimately limits the gate volta...

The electric field intensity of the compressed ultrarelativistic electron beams is approaching GV/m levels, which is sufficient to cause observable tunneling effect in the low band gap materials. In this article the tunneling ionization rate is estimated for the experimentally available electron beam parameters, and a proposed proof of principle experiment is outlined. Tunneling effect has expo...

This letter reports a mesopiezoresistive effect in a double-barrier resonant tunneling DBRT structure. In a DBRT system, an external mechanical stress causes a tensile strain, and the strain, in turn, affects the resonant tunneling and thereby the resistance. Theoretical analysis was carried out on an AlAs /GaAs /AlAs DBRT structure under in-plane uniaxial tensile stresses. The results show tha...

We study the effect of interlayer tunneling in the gauge theory describing a quasitwo-dimensional paramagnetic metal close to a second-order or weakly first-order antiferromagnetic phase boundary. In that theory, two species of fermions have opposite (rather than equal) charges with respect to the gauge field. We find that single-particle interlayer tunneling is suppressed at low energies. The ...

Simultaneous measurements of tunneling current and atomic forces provide complementary atomic-scale data of the electronic and structural properties of surfaces and adsorbates. With these data, we characterize a strong impact of the tunneling current on the measured force on samples with limited conductivity. The effect is a lowering of the effective gap voltage through sample resistance which ...

The role of Aharonov-Bohm effect in quantum tunneling is examined when potential is defined on S1 and has N -fold symmetry. For N = 2 case the quenched tunneling splitting occurs at cos Φ/2 = 0 where Φ is magnetic flux. For N = 3 and N = 4 cases the ground state energies splitted from threeand four-fold degenerate vacua by quantum tunneling are explicitly computed. The N = 4 case is applied to ...

Quantum tunneling between degenerate ground states through the central barrier of a potential is extended to excited states with the instanton method. This extension is achieved with the help of an LSZ reduction technique as in field theory and may be of importance in the study of macroscopic quantum phenomena in magnetic systems. Quantum effects on the macroscopic scale have attracted consider...

Tunneling spectroscopy has been used to detect the photoexcitation of charge carriers in the wide band-gap semiconductors, ZnO and cubic SiC. Because the process is energy sensitive, valence-toconduction hand or defect charge transfer transitions may be selectively excited and detected with the scanning tunneling microscope. Two types of transitions were detected which change the tunneling resp...