In this study we present a general approach for the analysis of the wake field of a point charge moving in a vacuum tunnel bored in dielectric material that is uniform in the direction parallel to the motion of the bunch. In the transverse direction the structure surrounding the dielectric may have arbitrary geometry. A quasianalytic expression that relates the decelerating force with the first...

A boundary layer wind tunnel facility has been adopted in order to conduct experimental measurements of the flow field around a model of the Panorama Giustinelli Building, Trieste (Italy). Information on the main flow structures has been obtained by means of flow visualization techniques and has been compared to the numerical predictions of the vortical structures spread on top of the roof, in ...

Magnetic tunnel junctions (MTJ) are promising candidates for applications in spintronic devices such as magnetic random access memories, read heads and sensors [1]. The MTJs consist of two ferromagnetic layers separated by an insulating barrier layer. The physical quantity measured for signal detection is the tunnelling magnetoresistance (TMR), i.e. the relative difference in the resistance bet...

We have developed a two-step growth scheme for single-crystal Al2O3 tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminum (Al) oxide layer at room temperature and crystallizing it at a high tem...

Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used to form CMOS gate stacks with low trap densities and excellent thickness control, it is well-suited as a technique to form a variety of tunnel barr...

We study conductance oscillations of antiferromagnetic layer tunnel junctions composed topological insulators such as ${\mathrm{MnBi}}_{2}{\mathrm{Te}}_{4}$. In the presence an in-plane magnetic field, we find that two terminal differential conductances across junction oscillates a function field strength. Notably, quantum interference at weak fields for even-layer case is distinctive from odd-...

boundary layer growth and hence displacement thickness are the key factors in shock position over aerodynamical surfaces at transonic regimes. since boundary layer growth is a function of free stream reynolds number and also of the transition location, the free stream reynolds number and also the other parameters involved in the boundary layer growth and its transition location are determinant ...

Application-layer tunnels nowadays represent a significant security threat for any network protected by firewalls and Application Layer Gateways. The encapsulation of protocols subject to security policies such as peer-to-peer, e-mail, chat and others into protocols that are deemed as safe or necessary, such as HTTP, SSH or even DNS, can bypass any network-boundary security policy, even those b...

Negative differential conductance in metal/amorphous nitrogenated carbon a-CNx /Si structures is demonstrated at room temperature. These metal-insulator-semiconductor tunnel diodes are fabricated by optimizing the tunnel barrier at the a-CNx /Si junction through the control of the band gap and nitrogen doping level in carbon where this a-C layer acts as a semi-insulator. A small electron tunnel...