نتایج جستجو برای: trap device

تعداد نتایج: 703177  

افضلی کوشا, علی, قبادی, نیره,

In this paper, analytical models for NBTI induced degradation in a P-channel triple gate MOSFET and HCI induced degradation in an N-channel bulk FinFET are presented, through solving the Reaction-Diffusion equations multi-dimensionally considering geometry dependence of this framework of equations. The new models are compared to measurement data and gives excellent results. The results interpre...

Journal: :Nature nanotechnology 2012
Alexander H Ip Susanna M Thon Sjoerd Hoogland Oleksandr Voznyy David Zhitomirsky Ratan Debnath Larissa Levina Lisa R Rollny Graham H Carey Armin Fischer Kyle W Kemp Illan J Kramer Zhijun Ning André J Labelle Kang Wei Chou Aram Amassian Edward H Sargent

Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulati...

2012
Jean-Baptiste Rayaisse Thomas Kröber Andrew McMullin Philippe Solano Steve Mihok Patrick M. Guerin

Here we describe field trials designed to standardize tools for the control of Glossina tachinoides, G. palpalis gambiensis and G.morsitans submorsitans in West Africa based on existing trap/target/bait technology. Blue and black biconical and monoconical traps and 1 m(2) targets were made in either phthalogen blue cotton, phthalogen blue cotton/polyester or turquoise blue polyester/viscose (al...

Journal: :Nucleation and Atmospheric Aerosols 2023

Efficient algorithms for calculating dark current in primary image processing real time typical modes of operation a stellar sensor are discussed. We present way to reduce the orientation error by improving accuracy position photocenter star on radiation receiver, charge-coupled matrix device. The dependence determining coordinates standard deviation irregularity thermogeneration rate, expresse...

2014
C. Andreoiu J. Dilling D. Frekers

A novel in-trap decay spectroscopy facility has been developed and constructed for use with TRIUMF’s Ion Trap for Atomic and Nuclear science (TITAN). This apparatus consists of an open-access spectroscopy ion-trap, which is surrounded radially with up to seven low-energy planar Si(Li) detectors. The ion-trap environment allows for the detection of low-energy photons by providing backing-free st...

2010
Zhi-Min Liao Chong Hou Li-Ping Liu Da-Peng Yu

Influence of temperature on photoconductivity of single Se nanowires has been studied. Time response of photocurrent at both room temperature and low temperature suggests that the trap states play an important role in the photoelectrical process. Further investigations about light intensity dependence on photocurrent at different temperatures reveal that the trap states significantly affect the...

Journal: :Lab on a chip 2013
Zongxing Wang Hung-jen Wu Daniel Fine Jeffrey Schmulen Ye Hu Biana Godin John X J Zhang Xuewu Liu

We fabricated a microfluidic device consisting of ciliated micropillars, forming a porous silicon nanowire-on-micropillar structure. We demonstrated that the prototype device can preferentially trap exosome-like lipid vesicles, while simultaneously filtering out proteins and cell debris. Trapped lipid vesicles can be recovered intact by dissolving the porous nanowires in PBS buffer.

2016
Peter J. T. White Katharine Glover Joel Stewart Amanda Rice

The universal mercury vapor black light trap is an effective device used for collecting moth specimens in a wide variety of habitats; yet, they can present challenges for researchers. The mercury vapor trap is often powered by a heavy automotive battery making it difficult to conduct extensive surveys in remote regions. The mercury vapor trap also carries a considerable financial cost per trap ...

Journal: :IEEE Trans. on CAD of Integrated Circuits and Systems 1993
Tahui Wang Sheng-Jyh Wu Chimoon Huang

An integrated device and circuit analysis has been developed to evaluate the DX trap induced anomalous transient phenomena in DCFL and SCFL AlGaAs/GaAs HEMT inverters. The slow transient effect and the hysteretic characteristics of the input-output voltage transfer function in the inverters are simulated. The result shows that in comparison with the DCFL inverter, the DX trap effects are much i...

2003
Francisco Jiménez-Molinos A. Palma A. Gehring F. Gámiz H. Kosina S. Selberherr

We present an analytical model to describe static and transient trap-assisted inelastic tunneling of electrons through insulating energy barriers. The model was implemented in a device simulator in order to calculate the gate current in metal-oxidesemiconductor capacitors, the trap occupancy in the gate oxides and the charging and discharging characteristics in stressed electrically erasable pr...

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