Germanium and carbon ions represent a significant portion of total ion implantation steps in the process flow. Very often ion source materials that used to produce ions are chemically aggressive, especially at higher temperatures, and result in fast ion source performance degradation and a very limited lifetime. GeF4 and CO2 are commonly used to generate germanium and carbon beams. In the case ...

Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b)) and the Richardson constant (A*) were carried out for the thermionic-emission process to describe well the cur...

An integrated theoretical model has been developed to predict the entire range of emission from thermionic to field emission, including the mixed emission regime. The model assumes a Sommerfeld free electron model supply function, for which the Fermi-Dirac distribution applies with a nonzero temperature. The electron transmission coefficient is calculated in one dimension using a transfer matri...