We demonstrate experimentally a simple and efficient approach for silicon oxide nanowire growth, by implanting Fe(+) ions into thermally grown SiO(2) layers on Si wafers and subsequently annealing in argon and hydrogen to nucleate the nanowires. We study the effect of implantation dose and energy, growth temperature, H(2) gas flow, and growth time on the silicon oxide nanowire growth. We find t...

We present the electronic structure evolution from graphite oxide to thermally reduced graphite oxide. Most functional groups were removed by thermal reduction as indicated by high resolution X-ray photoelectron spectroscopy, and the electrical conductivity increased 6 orders compare with the precursor graphite oxide. X-ray absorption spectroscopy reveals that the thermally reduced graphite oxi...

The Drosophila spineless (ss) gene encodes a basic-helix-loop-helix-PAS transcription factor that is required for proper specification of distal antennal identity, establishment of the tarsal regions of the legs, and normal bristle growth. ss is the closest known homolog of the mammalian aryl hydrocarbon receptor (Ahr), also known as the dioxin receptor. Dioxin and other aryl hydrocarbons bind ...

Figure 2: Confinements. An scanning electron microscope image of (2 μm)3 boxes etched out of thermally grown silicon oxide. These boxes are filled with liquid helium creating an extremely well defined array of uniform confinements. Figure 1: Confinement Cell. A diagram (not to scale) of a cell used to confine liquid helium. This consists of an array of (2 μm)3 boxes etched in a thermally grown ...

In this study, the effects of mechanical milling and YSZ reinforcing on oxidation behavior of CoNiCrAlY coatings were investigated. Various amounts of YSZ particles (0%, 5%, 10% and 15 wt.%) were mixed with commercial CoNiCrAlY powder and milled for 24 hrs. Then, the mechanically milled and commercial powders were deposited on Inconel 617 substrate using High Velocity Oxygen-Fuel (HVOF) process...

Defects in gate oxides/insulators have been characterized by many techniques, e.g., electrical, electron beam, ion beam, X-rays, neutron activation analysis, electron spin resonance, and others. These methods played a crucial role during the early MOS development to determine the origin of oxide/interface charges that led to unstable MOS devices. Thermally-grown oxides on silicon are now quite ...

Unexpected behavior is observed when charge pumping performed on silicon carbide MOSFETs with a thermally grown dioxide gate dielectric. Supported by experimental evidence, two root causes are proposed: the trap density and channel non-equilibrium. These difficult to overcome experimentally due limitations oxide breakdown doping variation along channel, respectively. A correct interpretation th...