We develop a hybrid type of quantum annealing in which we control temperature and quantum field simultaneously. We study the efficiency of proposed quantum annealing and find a good schedule of changing thermal fluctuation and quantum fluctuation. In this paper, we focus on clustering problems which are important topics in information science and engineering. We obtain the better solution of th...

A variable range hopping (VRH) transport has been observed in a low-temperature conductance of C60 field-effect transistor (C60FET). It appears below 100 K in place of a nearest neighbor hopping transport. We have investigated various C60FETs fabricated by several thermal annealing conditions and source-drain separations. Disorder states in the pseudo-gap of C60FET can be controlled by the ther...

Understanding the thermal budget of perpendicular materials is crucial for the potential application perpendicular magnetic tunnel junctions. In this paper, we study the effects of high-temperature rapid thermal annealing on the structural and magnetic properties of ultra-thin Co/Pd multilayers deposited at room temperature. It is shown that perpendicular magnetic anisotropy of ultra-thin Co/Pd...

double layer zno/sno2 thin film resistive gas sensors were fabricated by successive pvd of those oxides onto porcelain substrates. the metallic contacts were provided by electron beam evaporation of platinum onto substrates prior to deposition of the gas sensitive layers. deposits were thermally annealed at different temperatures. it was shown that the activation energy of electrical conduction...

We report the assembly and thermal transformation of linear diamondoid assemblies inside carbon nanotubes. Our calculations and observations indicate that these molecules undergo selective reactions within the narrow confining space of a carbon nanotube. Upon vacuum annealing of adamantane molecules encapsulated in a carbon nanotube, we observe a sharp Raman feature at 1857 cm(-1), which we int...

In this work, the variation of the optical gain in the InGaN/GaN quantum well after thermal annealing is simulated. The potential profile change of the quantum well resulting from the interdiffusion of Ga and In atoms across the interface of the well and the barrier during the thermal treatments is assumed to follow Fick s law. The results show that the thermal annealing can induce an increase ...

Changes in hydrogen distribution in -phase titanium hydrides (TiH1:92 1:95), covered with titanium oxide layers (TiO and TiO2), were investigated by elastic recoil detection analysis (ERDA) after isochronal and isothermal annealing experiments. The hydrogen concentration near to the surface of the hydride exponentially decreased as a function of annealing time in the temperature range from 423 ...

A very simple and effective procedure based on thermal annealing was reported in inducing discrete charge transfer in nanoparticle solid films. The particle ensembles were prepared by dropcasting a particle solution onto an interdigitated array electrode. The as-prepared particle films exhibited only linear featureless current-potential profiles in conductivity measurements, whereas after therm...

Porous silicon (PSi) layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm² fixed current density for different etching times. The samples were coated with a 50-60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron micro...

Bilayer Mg/Co thin films prepared using thermal evaporation method at pressure 10 – 5 torr at room temperature. The films were rapid thermal annealed (RTA) using halogen lamp for different times to get a homogeneous structure of Mg/Co thin films. The hydrogen gas was introduced in hydrogen chamber, where samples were kept at different pressure of H2 for thirty minutes. The UV–VIS transmission s...