Lithium niobate LiNbO3, LN is an important material which is widely applied in fabricating photonic and acoustic devices. However, it is difficult to either wet etch or dry etch LN due to the material’s properties. Here, the authors report novel pattern fabrication based on LN using focused ion beam FIB milling. When an array of small holes is etched, a severe tapering problem is observed as is...

When etching high-aspect-ratio silicon features using deep reactive ion etching DRIE , researchers find that there is a maximum achievable aspect ratio, which we define as the critical aspect ratio, of an etched silicon trench using a DRIE process. At this critical aspect ratio, the apparent etch rate defined as the total depth etched divided by the total elapsed time no longer monotonically de...

We have fabricated from the same epitaxial wafer series of GaSb-based Fabry–Pérot laser diodes emitting near 2.3 μm with different ridge etching-depths. The analysis device performances allows quantifying detrimental impact deep etching. threshold current density is increased, whereas external differential quantum efficiency reduced, due to a reduced internal and higher optical losses.

We perform a comprehensive theoretical assessment of fabrication tolerances for a 2D eight-level binary phase grating that is the central element of a multi-focal plane 3D microscopy apparatus. The fabrication process encompasses a sequence of aligned lithography and etching steps with stringent requirements on layer-to-layer overlay, etch depth and etched sidewall slope, which we show are none...

Etching of copper films by chlorine is induced by a scanning cw laser that locally heats the tllm. In experimental regimes with relatively high laser power, low chlorine pressure and fast scan speed, laser etching of copper is well characterized by a kinetic model based on the calculated temperature rise. In other regimes, a thick nondesorbed copper chloride layer forms on top of the etched cop...

In this paper, dry etching of silicon micro-trenches were completed with a time multiplexed inductively coupled plasma (ICP) etcher. By change the time of etching and passivation cycles, applied electrode and coil powers, gas flow rates and the gas flow overlap due to the finite time response of the mass flow controllers, the etch rate of silicon and mask materials, aspect ratio, the profiles o...

Nanoholes with a depth in the range of tens of nanometers can be formed on GaAs(001) surfaces at a temperature of 500°C by local etching after Ga droplet formation. In this work, we demonstrate that the local etching or nanodrilling process starts when the Ga droplets are exposed to arsenic. The essential role of arsenic in nanohole formation is demonstrated sequentially, from the initial Ga dr...