An approach of Green’s function is adopted to solve the inhomogeneous linear differential equations representing wave equations in piezo-composite materials. In particular, transference of horizontally polarised shear (SH) waves is considered in bedded structure comprising of porous-piezo electric layer lying over a heterogeneous half-space. Propagation of SH-waves is considered to be influence...

Nanostructured SnO2 thin films were prepared using Electron Beam-Physical Vapor Deposition (EB-PVD) technique. Then Ag nanoparticles synthesized by laser-pulsed ablation were sprayed on the films. In order to form a homogenous coated of SnO2 on the glass surface, it was thermally treated at 500°C for 1 h. At this stage, the combined layer on the substrate was completely dried for 8 h in the air...

in this article, failure and fracture mechanisms in an aluminum alloy (which has been used in diesel internal combustion engines), with and without ceramic thermal barrier coatings, have been investigated under isothermal and non-isothermal fatigue loadings. in this research, the base material is an aluminum-silicon-magnesium alloy and the thermal barrier coating includes a metallic bond coat l...

Using molecular dynamics simulation, the effect of Pb surfactant for the thin film growth of Co atoms on Cu 111 substrate was investigated. Specifically, the behavior of Co atoms being deposited on Cu 111 substrate with predeposited Pb layer was extensively investigated and compared with the case of without Pb layer to explain the effect of Pb surfactant. It was observed that Pb layer was float...

Damascene Cu electroplating for on-chip metallization, which we conceived and developed in the early 199Os, has been central to IBM's Cu chip interconnection technology. We review here the challenges of filling trenches and vias with Cu without creating a void or seam, and the discovery that electrodeposition can be engineered to give filling performance significantly better than that achievabl...

We have investigated the influence of the thickness of an undoped spacer layer under the channel on the current–voltage characteristics of GaAs MESFETs. To that purpose we have grown the active layers of the MESFETs on top of a 50 nm AlAs layer to separate the device effectively from the undoped GaAs substrate. Substrate leakage currents are of the order of 10−7 A at 30 V source–substrate bias....