Overview of Strained Silicon Technology With its physical limitations already in sight, industry and academic microelectronics research has been focused on developing new technologies to extend Moore’s Law. One of these viable technologies is strained silicon. The attractiveness of strained-Si is that it increases carrier mobility, can be easily integrated into current manufacturing processes, ...

Metal-oxide-semiconductor capacitors were fabricated on type-II staggered gap strained-Si/strained-Ge heterostructures epitaxially grown on relaxed SiGe substrates of various Ge fractions. Quasistatic quantummechanical capacitance-voltage (CV) simulations were fit to experimental CV measurements to extract the band alignment of the strained layers. The valence-band offset of the strained-Si/str...

INTRODUCTION Ring strain is a property possessed by small molecules and is recognized by chemists as an exceptionally efficient and practical tool for attaining challenging transformations. Organic chemistry has witnessed tremendous progress towards this end with the development of a plethora of methods that can harvest the high energy of a strained system and direct it into productive pathways...

Fenestranes are an intriguing class of highly strained molecules possessing a quaternary carbon with bonds that deviate from the canonical tetrahedral geometry. Herein we report the discovery that the natural product pleuromutilin can be used as a structurally complex starting material for the synthesis of a series of bridged cis,cis,cis,cis-[4.5.5.5]- and cis,cis,cis,cis-[4.5.7.5]oxafenestrane...

Embedding seven-membered rings into polycyclic aromatic molecules is attractive as they can exert an influence on molecular conformation that ultimately changes the solubility and π-electronics. The considerations in designing synthesizing a highly strained azatriseptane framework are discussed herein. We employ twofold macrocyclization strategy to form [7,7,7]-system through scoping various st...

As complementary metal-oxide-semiconductor field-effect transistors (MOSFETs) scale, strained Si and SiGe technology have received more attention as a means of enhancing performance via improved carrier mobility. One of the biggest challenges for strained Si and SiGe technology is Si-Ge interdiffusion during thermal processing. Two different aspects of Si-Ge interdiffusion are explored in this ...

The additive-free tetrazine/enol ether click reaction was performed in ultra-high vacuum (UHV) with an enol group covalently linked to a silicon surface: Dimethyl 1,2,4,5-tetrazine-3,6-dicarboxylate molecules were coupled the of functionalized cyclooctyne which adsorbed on (001) surface via strained triple bond cyclooctyne. observed at substrate temperature 380 K by means X-ray photoelectron sp...

This thesis studied the application of strained-Si technology to RF power LDMOSFETs. Key issues for its implementation were determined to be thermal budget restrictions, gate oxide formation and impact ionization effects. 2D simulations were carried out to explore the design space of the strained-Si LDMOSFET. In order to address the thermal budget restrictions, use of a high-tilt implant for th...

GaN growth on nitridated sapphire (0001) by rf plasma-assisted metal-organic molecular-beam epitaxy is shown to exhibit a highly superlinear growth rate and a transition from strained, smooth growth to relaxed cluster growth during the first layer. A coupled rate-equation model suggests that the growth rate arises from both the site-dependent reactivity of precursor molecules and a layer-depend...

Electro-thermal characteristics of strained-Si MOSFETs operating in high-current, high temperature regimes were investigated using device/circuit mixed mode simulations. The material parameters of strained-Si were calibrated for device simulations. Especially the phonon mean-free-path of strained-Si with high electric fields was estimated based on a full-band Monte Carlo device simulation. Desp...