Perovskite-type N-substituted SrTiO3 thin films with a preferential (001) orientation were grown by pulsed laser deposition on (001)-oriented MgO and LaAlO3 substrates. Application of N2 or ammonia using a synchronized reactive gas pulse produces SrTiO3-x:Nx films with a nitrogen content of up to 4.1 at.% if prepared with the NH3 gas pulse at a substrate temperature of 720 °C. Incorporating nit...

In order to establish the density and spatial distribution of charge carriers intrinsic to the n-type LaAlO3-SrTiO3 heterointerface, we carry out first-principles calculations on the LaAlO3 n SrTiO3 15 slab model with n=2–10. As the thickness of the LaAlO3 layer increases, the charge transfer from LaAlO3 to SrTiO3 converges to half an electron per two-dimensional unit cell. It is found that the...

We have demonstrated well-behaved accumulation-mode all oxide NMOSFETs with amorphous atomic-layer-deposited (ALD) LaAlO3 gate dielectric stacks on crystalline SrTiO3 substrates. A maximum drain current exceeding 10 mA/mm has been obtained on a 3.75μm-gate-length device, proving a very conductive channel can be formed at the oxide-oxide interface. Four different gate dielectric stacks, which ar...

The present investigation highlights the synthesis of polyaniline (PANI)-coated graphene oxide doped with SrTiO3 nanocube nanocomposites through facile in situ oxidative polymerization method for the efficient removal of carcinogenic dyes, namely, the cationic dye methylene blue (MB) and the anionic dye methyl orange (MO). The presence of oxygenated functional groups comprised of hydroxyl and e...

The dielectric permittivity, dielectric quality factor ~inverse dielectric loss!, and lattice parameter of 140 nm sputtered SrTiO3 films were dependent on the oxygen partial pressure and total chamber pressure (O21Ar) during film growth. Films were grown at 25 and 75 mTorr ~mT! in an oxygen rich and oxygen deficient sputtering gas environment concurrently on ~100! SrTiO3 and ~111! Pt/~0001! Al2...

The dielectric behavior of SrTiO3 thin films prepared by the pulsed-laser deposition technique on SrTiO3 single-crystal substrates is studied under dc electric field. A high dielectric constant maximum «max(;2280) and a low-loss tan d (;0.001) are obtained. Compared with the observation in SrTiO3 single crystals, an additional dielectric loss peak with frequency dispersion is observed around 15...

Using a surface x-ray diffraction technique, we investigated the atomic structure of two types of interfaces between LaAlO3 and SrTiO3, that is, p-type (SrO/AlO2) and n-type (TiO2/LaO) interfaces. Our results demonstrate that the SrTiO3 in the sample with the n-type interface has a large polarized region, while that with the p-type interface has a limited polarized region. In addition, atomic i...

The interfaces of LaAlO3/SrTiO3 and (LaAlO3)x(SrTiO3)1−x/SrTiO3 heterostructures have been investigated by soft x-ray photoelectron spectroscopy for different layer thicknesses across the insulator-to-metal interface transition. The valence band and Fermi edge were probed using resonant photoemission across the Ti L2,3 absorption edge. The presence of a Fermi-edge signal originating from the pa...

A nano-grid structure of perovskite SrTiO3 NWs is developed for a novel electron transport layer in inverted polymer solar cells. Due to the excellent charge transporting properties of the SrTiO3 nano-grid structure, the device employing this nanostructure showed ∼32% enhanced photovoltaic performance, compared to the solar cell using a TiO2 thin film.

Oxide interfaces, including the LaAlO3/SrTiO3 interface, have been a subject of intense interest for over a decade due to their rich physics and potential as low-dimensional nanoelectronic systems. The field has reached the stage where efforts are invested in developing devices. It is critical now to understand the functionalities and limitations of such devices. Recent scanning probe measureme...