We have investigated the suppression of single-electron charging effects in metallic single-electron transistors when the conductance of the tunnel junctions becomes larger than the conductance quantum e2yh. We find that the Coulomb blockade of the conductance is progressively shifted at lower temperatures. The experimental results agree quantitatively with the available 1yT expansion at high t...

We report on combined measurements of heat and charge transport through a single-electron transistor. The device acts as a heat switch actuated by the voltage applied on the gate. The Wiedemann-Franz law for the ratio of heat and charge conductances is found to be systematically violated away from the charge degeneracy points. The observed deviation agrees well with the theoretical expectation....

Using a classical equation of motion, dynamics of the phase is analyzed in the Inductive Single-Electron Transistor (L-SET) which is a promising new system suitable for quantum measurement with ultimate sensitivity and low back-action. In a regime of nonlinear dynamics, a shift of the oscillator resonant frequency is discovered which has a direct analogy to the switching of a dc-biased Josephso...

Recent research in SET gives new ideas which are going to revolutionize the random access memory and digital data storage technologies. The goal of this paper is to discuss about the basic physics, applications of nano electronic device ‘Single electron transistor [SET]’ which is capable of controlling the transport of only one electron. Single-electron transistor (SET) is a key element of curr...

then the tunneling events become correlated. These correlations result in several remarkable features of the dc I-V curve. ' In particular, it is sensitive to fractional variations (in units of the electron charge e} of the background charge Qo of the central electrode (Fig. 2). One can control the current through the SET by variation of the charge Qo. Figure 1(b) shows an equivalent circuit of...

This paper presents a new exact analytical model for Single electron transistor (SET) applicable for circuit simulation. It was developed based on orthodox theory of single electronics using master equation. A scheme was suggested to determine the most probable occupied electron states. The proposed model is more flexible that is valid for single or multi gate, symmetric or asymmetric devices a...

We investigate theoretically the transport characteristics of a single-electron transistor affected by the dynamic deformation of the device configuration due to phonons. By considering changes in capacitances and tunnel resistances caused by the breathing and oblong vibrations of the island that forms part of the transistor, we formulate the electron-phonon interaction peculiar to the device a...

A thorough study on the performance of eight bit Analog-Digital converters based on single electron transistors has been done in this paper. The Single Electron Transistors are smaller in size, operate at a greater speed and have low power consumption when compared to CMOS. Three methods of Analog to Digital Conversion techniques Complementary Single Electron Tunnelling Transistor, Periodic Sym...