نتایج جستجو برای: single electron device

تعداد نتایج: 1718195  

1997
P. Hadley

Single-electron tunneling devices can detect charges much smaller than the charge of an electron. This enables phenomenally precise charge measurements and it has been suggested that large scale integration of single-electron devices could be used to construct logic circuits with a high device packing density. Here the operation of the two basic types of single-electron tunneling transistors is...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه صنعتی خواجه نصیرالدین طوسی - دانشکده مهندسی برق 1381

در این پروژه پس از معرفی قطعات تک-الکترون متعارف و مورد استفاده و مشکلات آنها، به بررسی ساختارهای سوزنی شکل در ابعاد و اندازه های متفاوت می پردازیم. این ساختارها به بافت سیلیکون متخلخل بسیار شبیه هستند. با اسبفاده از قابلیت های برنامه ی fastcap، پس از شبیه سازی ساختارهای تعریف شده، خازن آنها محاسبه و نشان داده می شود که مقدار این خازن در همان حدی است که جزیره های بکار برده شده در ادوات تک-الکتر...

2001
Peter Hadley Pieter Heij

As circuits are made smaller, certain new physical phenomena will appear. When the capacitance of components becomes so small that adding a single electron to that component causes the voltage to jump significantly, then singleelectron effects will have to be included in the device models. This can have important consequences for the conductance through the device and the noise that is observed...

2011
Umesh Srinivasan

This work describes the simulation and modeling of current voltage characteristics of polymer light emitting diode. To understand the device characteristics first a single layer organic device with single carrier injection is studied. The simulations are used to clarify the role of barrier height, device thickness and mobility. A new analytical model is developed based on a simple mobility mode...

1993
Gerhard Fasol Hiroyuki Sakaki

We show that a quantum wire device with spin splitting can work as an active spin polarizer. Hot electrons in one ‘spin’ subband (e.g. ‘spin-up’) may pass such a device with weak electron pair scattering, while electrons in the opposite subband (‘spindown’) may have high conversion probability into the ‘spin-up’ subband, resulting in spin polarization of a hot electron beam. Under different cir...

2017
A. C. McRae V. Tayari J. M. Porter A. R. Champagne

Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channe...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه شهید بهشتی - دانشکده علوم 1388

چکیده ندارد.

Journal: :I. J. Bifurcation and Chaos 2007
Takahide Oya Ikuko N. Motoike Tetsuya Asai

We propose a novel semiconductor device in which electronic-analogue dendritic trees grow on multilayer single-electron circuits. A simple cellular-automaton circuit was designed for generating dendritic patterns by utilizing the physical properties of single-electron devices, i.e. quantum and thermal effects in tunneling junctions. We demonstrate typical operations of the proposed circuit thro...

Journal: :Science 1998
Schoelkopf Wahlgren Kozhevnikov Delsing Prober

A new type of electrometer is described that uses a single-electron transistor (SET) and that allows large operating speeds and extremely high charge sensitivity. The SET readout was accomplished by measuring the damping of a 1.7-gigahertz resonant circuit in which the device is embedded, and in some ways is the electrostatic "dual" of the well-known radio-frequency superconducting quantum inte...

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