We report a high-performance graphene/Si field-effect transistor fabricated via rapid chemical vapor deposition. Oligolayered graphene with a large uniform surface acts as the local gate of the graphene transistors. The scaled transconductance, gm, of the graphene transistors exceeds 3 mS/μm, and the ratio of the current switch, Ion/Ioff, is up to 100. Moreover, the output properties of the gra...