In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in...

In-depth understanding of the retarded oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanostructures such as nanobeams, concave/convex nanorings, and nanowires exhibits an extremely different and complex behavior. Such effects have been investigated by the modeling of the mechanical stress generated during t...

In this work, we use a two-step metal-assisted chemical etching method to produce films of silicon nanowires shaped in micrograins from metallurgical-grade polycrystalline silicon powder. The first step is an electroless plating process where the powder was dipped for few minutes in an aqueous solution of silver nitrite and hydrofluoric acid to permit Ag plating of the Si micrograins. During th...

The goal of this research was to fabricate and characterize vertically aligned silicon nanowire gas sensors. Silicon nanowires are very attractive for gas sensing applications and vertically aligned silicon nanowires are preferred over horizontal nanowires for gas sensing due to the high density of nanowire arrays and the increased nanowire surface area per substrate area. However, the developm...

Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are ...

The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage mediu...

Representative results of computer simulation and/or modeling studies of the nanomechanical and thermal transport properties of an individual carbon nanotube, silicon nanowire, and silicon carbide nanowire systems have been reviewed and compared with available experimental observations. The investigated nanomechanical properties include different elastic moduli of carbon nanotubes, silicon nano...

We report the observation of phase coherent transport in catalyst-free InAs and InAs1−xSbx nanowires grown by molecular beam epitaxy on silicon (111) substrates. We investigate three different methods to gain information on the phase coherence length of the nanowires: first through the study of universal conductance fluctuations as a function of both magnetic field and gate voltage and then thr...

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Here we report an approach to roll out Li-ion battery components from silicon chips by a continuous and repeatable etch-infiltrate-peel cycle. Vertically aligned silicon nanowires etched from recycled silicon wafers are captured in a polymer matrix that operates as Li(+) gel-electrolyte and electrode separator and peeled off to make multiple battery devices out of a single wafer. Porous, electr...