نتایج جستجو برای: silicon film

تعداد نتایج: 166952  

2011
Amirkianoosh Kiani Krishnan Venkatakrishnan Bo Tan

In this paper, we present a new method for direct-write laser fabrication of thin-film amorphous silicon (a-Si) on crystalline silicon substrate induced by femtosecond laser irradiation. Using megahertz frequency femtosecond laser pulses makes it possible to control laser fluence in the amorphization range of silicon under ambient condition. Finally, a thin-film of amorphous silicon is generate...

Journal: :Langmuir : the ACS journal of surfaces and colloids 2013
Prithwish Chatterjee Yuping Pan Eric C Stevens Teng Ma Hanqing Jiang Lenore L Dai

Environmentally responsive hydrogels hold multiple important applications. However, the functionality of these materials alone is often limited in comparison to other materials like silicon; thus, there is a need to integrate soft and hard materials for the advancement of environmentally sensitive materials. Here we demonstrate the capability of integrating a thermoresponsive hydrogel, poly(N-i...

2015
Tuomas Hänninen

Amorphous silicon oxynitride (SiOxNy) thin films were grown by reactive high power impulse magnetron sputtering from a pure silicon target in Ar/N2O plasmas. The elemental composition of the films was shown to depend on the target surface conditions during the film deposition, as well as on the reactive gas flow rate. When the target was sputtered under poisoned surface conditions, the film com...

2015
Su Chan Lee Surajit Some Sung Wook Kim Sun Jun Kim Jungmok Seo Jooho Lee Taeyoon Lee Jong-Hyun Ahn Heon-Jin Choi Seong Chan Jun

Graphene has been studied for various applications due to its excellent properties. Graphene film fabrication from solutions of graphene oxide (GO) have attracted considerable attention because these procedures are suitable for mass production. GO, however, is an insulator, and therefore a reduction process is required to make the GO film conductive. These reduction procedures require chemical ...

2016
Qingling Ouyang Shuwen Zeng Li Jiang Liying Hong Gaixia Xu Xuan-Quyen Dinh Jun Qian Sailing He Junle Qu Philippe Coquet Ken-Tye Yong

In this work, we designed a sensitivity-enhanced surface plasmon resonance biosensor structure based on silicon nanosheet and two-dimensional transition metal dichalcogenides. This configuration contains six components: SF10 triangular prism, gold thin film, silicon nanosheet, two-dimensional MoS2/MoSe2/WS2/WSe2 (defined as MX2) layers, biomolecular analyte layer and sensing medium. The minimum...

2016
Christian Sämann Jürgen R. Köhler Morris Dahlinger Markus B. Schubert Jürgen H. Werner

We present a new and simple laser-based process to porosify thin film silicon using a pulsed laser. During deposition, we incorporate gas atoms or molecules into the Si thin film. Pulsed laser radiation of wavelength λ = 532 nm heats up thin film Si beyond its melting point. Upon heating, gas atoms or molecules form nm-sized thermally expanding gas bubbles in the silicon melt, until they explos...

2007
A. A. D. T. Adikaari D. M. N. M. Dissanayake R. P. Silva

Excimer laser textured thin film silicon and poly 2-methoxy-52 -ethylhexyloxy -1,4-phenylenevinylene bilayer solar cells are fabricated and characterized with air mass 1.5 simulated solar irradiation. The polymer layer increases the light harvesting capability of the cell and increases the shunt resistance while increasing open circuit voltage. The highest efficiency of 0.87% for the thin film ...

2003
J. Graetz C. C. Ahn R. Yazami B. Fultz

Anode materials of nanostructured silicon have been prepared by physical vapor deposition and characterized using electrochemical methods. The electrodes were prepared in thin-film form as nanocrystalline particles ~12 nm mean diameter! and as continuous amorphous thin films ~100 nm thick!. The nanocrystalline silicon exhibited specific capacities of around 1100 mAh/g with a 50% capacity retent...

2003
Xiangli Li Stephen A. Parke Bogdan M. Wilamowski

In this paper, the threshold voltage of fully depleted silicon on insulator device with geometry scale down below 100nm is investigated deeply. All the device simulations are performed using SILVACO Atlas device simulator. Several ways to control the threshold voltage are proposed and simulated. Threshold voltage changing with the silicon film thickness, channel doping concentration, gate oxide...

2017
A. Lei R. Xu C. M. Pedersen M. Guizzetti K. Hansen E. V. Thomsen K. Birkelund

This work presents a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibrational energy harvesters aimed towards vibration sources with peak frequencies in the range of a few hundred Hz. By combining KOH etching with mechanical front side protection, SOI wafer to accurately define the thickness of the silicon part of the harvester and a silicon compatible PZT th...

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