We observe critical coupling to surface phonon-polaritons in silicon carbide by attenuated total reflection of mid-IR radiation. Reflectance measurements demonstrate critical coupling by a double scan of wavelength and incidence angle. Critical coupling occurs when prism coupling loss is equal to losses in silicon carbide and the substrate, resulting in maximal electric field enhancement.

In view of large interest in the improve of Al/Al alloy based Metal matrix Composite and high-temperature ceramics on the base of silicon carbide, a comprehensive review of the data on structure, properties and the known methods of processing of silicon carbide seems timely. The most striking feature of silicon carbide is its polytypism, i.e. formation of a great number of structural changes wi...

We present an introduction to the rapidly growing field of epitaxial graphene on silicon carbide, tracing its development from the original proof-of-concept experiments a decade ago to its present, highly evolved state. The potential of epitaxial graphene as a new electronic material is now being recognized. Whether the ultimate promise of graphene-based electronics will ever be realized remain...

Wastes from agriculture or sewage systems have several properties, such as huge volume, high humidity, and high organic composition. According to past studies, sugarcane extract, peanut shells and rice husks have high silicon content. Chemical conversion of biomass feedstock will enhance usage and provide value to agricultural waste. In this research, we applied hydrothermal carbonization to co...

Thin silicon carbide films have been deposited by chemical vapor deposition on p-type ~100! silicon substrates. The composition and bonds formed in these films have been analyzed by x-ray photoelectron spectroscopy ~XPS! and infrared spectroscopy. The native surface oxide on the silicon carbide surface induced by air exposure has also been studied. Several phases are detected in the near-surfac...

At room temperature, 300 K, silicon carbide film was formed using monomethylsilane gas on the reactive surface prepared using argon plasma. Entire process was performed at reduced pressure of 10 Pa in the argon plasma etcher, without a substrate transfer operation. By this process, the several-nanometer-thick amorphous thin film containing silicon-carbon bonds was obtained on various substrates...

Cubic silicon carbide is a promising material for medium power electronics operating at high frequencies and for the subsequent growth of gallium nitride for more efficient light emitting diodes. We present a new approach to produce freestanding cubic silicon carbide (3C-SiC) with the ability to obtain good crystalline quality regarding increased domain size and reduced defect density. This wou...

The pressure-induced phase transition in silicon carbide is studied using a constant-pressure ab initio technique. The reversible transition between the zinc-blende structure and the rock-salt structure is successfully reproduced through the simulation. The transformation mechanism at the atomistic level is characterized, and it is found that the transition is based on a tetragonal and an ortho...