We demonstrate optical switching of electrically resonant terahertz planar metamaterials fabricated on ErAs/GaAs nanoisland superlattice substrates. Photoexcited charge carriers in the superlattice shunt the capacitive regions of the constituent elements, thereby modulating the resonant response of the metamaterials. A switching recovery time of 20 ps results from fast carrier recombination in ...

1. Abstract A well designed capacitive micro-machined switch requires small electrostatic pull-in force to easy switch-on and high natural frequencies to fast switch-off. Since the change of geometrical parameters of the bridge (moving part of the switch) affects contrary to one of these aspects, one could search for a shape of the bridge to obtain optimum functioning. The paper deals with desi...

The paper discusses the design aspects of capacitive RF MEMS Symmetric Toggle Switch (STS) with particular emphasis on device compactness, reliability, and improvement in isolation & insertion loss by incorporating hafnium dioxide (HfO2) as a dielectric material. The major impact of the change from SiO2 to HfO2 having dielectric constant of 20, is the reduction in overall dimensions of the swit...

This paper discusses issues relating to the reliability and methods for employing high-cycle life testing in capacitive RF MEMS switches. In order to investigate dielectric charging, transient current spectroscopy is used to characterize and model the ingress and egress of charges within the switch insulating layer providing an efficient, powerful tool to investigate various insulating material...

We propose capacitively driven low-swing global interconnect circuit using a receiver that utilizes magnetoelectric (ME) effect induced magnetization switching to reduce the energy consumption. Capacitively driven wire has recently been shown to be effective in improving the performance of global interconnects. Such techniques can reduce the signal swing in the interconnect by using a capacitiv...

In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The results for the development of this proposed switch include the basics of the circu...

This paper is focused on the creation of an efficient electromagnetic model of MEMS switches which operates at microwave frequencies. The switches are first characterized using a full wave analysis based on finite element method aiming to extract the S-parameters of the switches for different geometrical dimensions. From the S-parameter data base, a scalable lumped circuit model is extracted to...

In this paper, RF MEMS Capacitive Switches for two different dielectrics hafnium oxide (HfO2) and silicon nitride (Si3N4) are presented. The switches have been characterized and compared in terms of RF performance. The major impact of the change from Si3N4 to HfO2 having dielectric constant 20 is the reduction in overall dimension of the switch; capacitive area is reduced by 66% leading to over...

This paper presents an analysis and system-level design of a capacitive harvester of vibration energy composed from a mechanical resonator, capacitive transducer and a conditioning circuit based on the BUCK DC-DC converter architecture. The goal of the study is to identify optimal power performance of the system, to understand the electromechanical coupling phenomena and to propose the optimal ...