We demonstrate, experimentally and theoretically, excitable nanosecond optical pulses in optoelectronic integrated circuits operating at telecommunication wavelengths (1550 nm) comprising a nanoscale double barrier quantum well resonant tunneling diode (RTD) photo-detector driving a laser diode (LD). When perturbed either electrically or optically by an input signal above a certain threshold, t...

Mitsubishi Electric has developed a 1.7 kV hybrid SiC power module consisting of 6th generation Si-IGBT and SiC Schottky Barrier Diode (SBD). Adopting SiC-SBD enables a significant power loss reduction during the diode turn-off and IGBT turn-on. And adopting of 6th generation IGBT enables the reduction of the IGBT turn-off loss. By using the newly developed chip set, high temperature enduring g...

Large KrF amplifiers use electron beams to excite the laser gas. By necessity, the diode and laser cavity must be isolated by a mechanical barrier; an electron beam diode operates in vacuum, while the laser cavity may be filled with amagats of gas. Isolation is typically accomplished by a metal foil of low mass density which is mechanically supported by a structure having multiple open slots se...

I A reliable device model is crucial for the development d implementation of a circuit design. However, the sation of a high quality model requires a significant lount of timeand money. The software package presented this paper seeks to minimize the timeand money invested the realization of a high quality model for SiC Schottky, erged PiN Schottky, and PiN Power diodes based on cNutt and Mantoo...

A software program for on-state parameter extraction is presented for the realization of a high quality model for SiC Schottky, Merged PiN Schottky, and PiN Power diodes based on McNutt and Mantooth's Comprehensive SiC Diode model [ 1 ].

Herein, the organic semiconductor methyl orange (MO), is investigated for the first time for its electronic applications. For this purpose, Al/MO/n-Si heterojunction is fabricated through economical cheap and simple “drop casting” technique. The currentvoltage (I-V) measurements of the device are made at room temperature under dark conditions. The I-V characteristics of Al/MO/n-Si junction exhi...

Herein, the organic semiconductor methyl orange (MO), is investigated for the first time for its electronic applications. For this purpose, Al/MO/n-Si heterojunction is fabricated through economical cheap and simple “drop casting” technique. The currentvoltage (I-V) measurements of the device are made at room temperature under dark conditions. The I-V characteristics of Al/MO/n-Si junction exhi...

Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/ n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which...

The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-GaAs Schottky diodes on n-Ge substrates are investigated and compared with characteristics of diodes on GaAs substrates. The diodes show the non-ideal behavior of I–V characteristics with an ideality factor of 1.13 and barrier height of 0.735 eV. The forward bias saturation current was found to be large (3×10 A vs. ...

An open structure SIS receiver, used already for astronomy at 345 GHz was tested at 470 and 690 GHz. Receiver noise temperatures considerably better than those of standard systems based on Schottky diode mixers were accomplished. A specific merrit of this system is the option to change the range of input frequencies by simply mounting a specific mixer element in a standard mixer block and by ex...