A proposal for a new type of thin-film field-emission display by edge breakdown of MIS structure Abstract A new type of field emission display (FED) based on an edge-enhance electron emission from metal-insulator-semiconductor (MIS) thin film structure is proposed. The electrons produced by an avalanche breakdown in the semiconductor near the edge of a top metal electrode are initially injected...

In recent years, the demand for thin film coatings on large area substrates has been rapidly increasing. Coating is some times required to make an object harder, or to provide the surface with particular electrical and optical properties. Hence, research on thin film science has received much attention due to its tremendous applications in modern technology. The importance of coatings and the s...

We report the implementation of three dimensionally cross-linked, organic nanodielectric multilayers as ultrathin gate dielectrics for a type of thin film transistor device that uses networks of single-walled carbon nanotubes as effective semiconductor thin films. Unipolar n- and p-channel devices are demonstrated by use of polymer coatings to control the behavior of the networks. Monolithicall...

A new miniature interferometer has recently been developed for monitoring the changes of film thickness and refractive index, wherein a semiconductor laser and a photodiode detector are integrated to form a laser/detector hybrid. The laser light is collimated by a lens. When the laser light hits a film, it is reflected twice by the two interfaces between the film and the surrounding mediums. Th...

Ethanol (C2H6O) sensitivity of zinc oxide (ZnO) thin film has been studied in present work. Semiconductor thin films of zinc oxide (ZnO) were deposited onto alkali-free glass substrates by the sol–gel method and dip-coating technique. The ZnO sol was synthesized by dissolving zinc acetate dehydrate in ethanol, and then adding Tetra ethanol-amine.  The as-coated films were preheated at 150 ºC fo...

In thin film technology, future semiconductor and display products with high performance, high density, large area, and ultra high definition with three-dimensional functionalities require high performance thin film transistors (TFTs) with high stability. Zinc oxynitride, a composite of zinc oxide and zinc nitride, has been conceded as a strong substitute to conventional semiconductor film such...

ZnO is an important II-VI semiconductor material for devices with possible applications such as piezoelectric transducers, gas sensors, transparent electronic in solar cell, saw devices. Based on known research, ZnO is the most promising in optoelectronic and optical applications, especially in UV region. An understanding of the optical properties of ZnO thin film on different substrates is als...

Recent advances in thin-film crystal-g:rowth techniques such as molecular-beam epitaxy (MBE) have enabled the fabrication of quantum-well devices, which consist of alternating layers of various crystalline solid materials so thin that the materials' combined quantum-mechanical properties override their individual bulk properties. By using MBE, we constructed a number of quantum-well devices tha...

The most commonly used method for the production of thin films is based on deposition of atoms or molecules onto a solid surface. One of the suitable method is to produce high quality metallic, semiconductor and organic thin film is Ionized cluster beam deposition (ICBD), which are used in electronic, robotic, optical, optoelectronic devices. Many important factors such as cluster size, cluster...

In this work, nanostructured TiO2 and Cr-doped TiO2 thin films were deposited on glass substrate through sonochemical-chemical vapor deposition (CVD) method. The resulting thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible absorption spectroscopy, and photoluminescence spectroscopy techniques. The TiO2 thin film has nanocubic morphology and ...