نتایج جستجو برای: semiconductor switch

تعداد نتایج: 119851  

Journal: :Optics express 2005
H Ju S Zhang D Lenstra H de Waardt E Tangdiongga G Khoe H Dorren

We investigate all-optical switching in a multi-quantum-well semiconductor optical amplifier-based nonlinear polarization switch using optical pulses with duration of 200 fs at a central wavelength of 1520 nm. We show full recovery of the switch within 600 fs, in both the gain and absorption regime. We discuss the switching and recovery mechanisms using numerical simulations that are in qualita...

2010
Masato Ishibashi Ryo Tanabe Tadahiko Shinshi Minoru Uehara

INTRODUCTION Because they have higher isolation and lower insertion loss compared to semiconductor switches, the last decade has seen the development of several types of MEMS (Micro Electro Mechanical Systems) switch. Many of these are electrostatically actuated and so need high drive voltages, limiting the initial gap between the contact points to a few micrometers [1-3]. Such small gaps betwe...

2003
Marc Baldo Joseph Shinar Zoltan Soos Nikolai Lebedev Barry Bruce Francesco Stellacci Shuguang Zhang Rupa Das Michael Segal Patrick J. Kiley Julie Norville Rajay Kumar Benjie Limketkai

Introduction Molecular electronics is one of a number of competing approaches to the problem of employing nanotechnology to increase the performance of electronic devices. Molecules possess some potential advantages for nanoelectronics: chemistry offers a unique ability to tailor features at the nanoscale, molecules may be semiconducting, they can de designed to assemble on specific sites in a ...

2012
S. K. Mazloomi Nasri b. Sulaiman

By analyzing the sources of energy and power loss in PWM (Pulse Width Modulation) controlled drivers of water electrolysis cells, it is possible to reduce the power dissipation and enhance the efficiency of such hydrogen production units. A PWM controlled power driver is based on a semiconductor switching element where its power dissipation might be a remarkable fraction of the total power dema...

2005
Ching-Liang Dai Hsuan-Jung Peng Mao-Chen Liu Chyan-Chyi Wu Lung-Jieh Yang

This work investigates the fabrication of a RF (ratio frequency) MEMS (micro elector mechanical system) switch using the standard 0.35 m 2P4M (double polysilicon four metal) CMOS (complementary metal oxide semiconductor) process and the post-process. The switch is a capacitive type, which is actuated by an electrostatic force. The structure of the switch consists of a CPW (coplanar waveguides) ...

Journal: :Wireless Engineering and Technology 2010
Viranjay M. Srivastava

In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless telecommunication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxide-semiconductor (DP4T DG RF CMOS) switch for operating at the 1 GHz is implemented with 45-nm CMOS process technology. This proposed RF switch is capable to select the data streams...

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