In this work we will introduce quantum dots, wires and wells as nanostructure objects with different dimensionality. We will demonstrate the effect of applied external static electric field on the example of semiconductor quantum wells and the appearance of Stark effect. We will briefly allude to some of the optoelectronic devices using Stark effect. The influence of quantum well concentration ...

We investigate theoretically the low-energy physics of semiconductor Majorana wires in the vicinity of a magnetic field-driven topological quantum phase transition (TQPT). The local density of states at the end of the wire, which is directly related to the differential conductance in the limit of point-contact tunneling, is calculated numerically. We find that the dependence of the end-of-wire ...

The scaling of exciton binding energy in semiconductor quantum wires is investigated theoretically through a non-variational, fully three-dimensional approach for a wide set of realistic state-of-the-art structures. We find that in the strong confinement limit the same potential-to-kinetic energy ratio holds for quite different wire cross-sections and compositions. As a consequence, a universal...

We calculate the intersubband and intrasubband many-body inelastic Coulomb scattering rates due to electron-electron interaction in two-subband semiconductor quantum wire structures. We analyze our relaxation rates in terms of contributions from interand intrasubband charge-density excitations separately. We show that the intersubband (intrasubband) charge-density excitations are primarily resp...

The carrier transport in strain-induced laterally ordered ~InP!2 /~GaP!2 quantum wire ~QWR! samples was examined with a noncontact Haynes–Shockley diffusion measurement which utilized time-resolved scanning cathodoluminescence. An anisotropy in ambipolar diffusion along the @110# and @11̄0# directions ~perpendicular and parallel to the QWRs, respectively! was observed. The temperature dependence...

A theory of drift-diffusion transport in a low-dimensional field-effect transistor is developed. Two cases of a semiconductor nanowire and a single-wall nanotube are considered using self-consistent electrostatics to obtain a general expression for the transconductance. This quantum-wire channel device description is shown to differ from a classical device theory because of the specific nanowir...

the comparison of growth processes and fluorescent properties of cdznte semiconductor quantum dots that are synthesized in different concentrations of zn2+ in water are discussed in this paper. the samples are characterized through absorbtion (uv) and photoluminescence spectra (pl). the results show that when the reaction time is prolonged, the absorption peak and fluorescent emission peak pres...

In this paper we consider electromagnetic field quantization in the presence of a dispersive and absorbing semiconductor quantum dot. By using macroscopic approach and Green's function method, quantization of electromagnetic field is investigated. Interaction of a two-level atom , which is doped in a semiconductor quantum dot, with the quantized field is considered and its spontaneous emission ...

Semiconductor devices, especially those named heterostructures, are very attractive systems to study the quantum behavior of nature. Quantum-mechanical effects are particularly important for designing new classes of devices for specific applications. As a general rule, the final goal is to obtain smaller devices (for best integration) able to operate at higher frequencies for transmission of mo...