We investigate the photon statistics of the field emitted from a semiconductor microcav-ity containing a quantum well within the quantum trajectory approach. A dynamical behavior of the autocorrelation function depending of the system parameters is discussed .

This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 - x Cd x Te grown by molecular beam epitaxy. The structure contains a single quantum well Hg0.35Cd0.65Te/HgTe/Hg0.35Cd0.65Te with thickness of 5.6 nm in the sub-surface layer of the semiconductor. Both the conductance-voltage and capacitance-voltage characteristics show strong o...

In this work we will introduce quantum dots, wires and wells as nanostructure objects with different dimensionality. We will demonstrate the effect of applied external static electric field on the example of semiconductor quantum wells and the appearance of Stark effect. We will briefly allude to some of the optoelectronic devices using Stark effect. The influence of quantum well concentration ...

In the past 20 years the semiconductor laser has become a key device in optical electronics because of its pure output spectrum and high quantum efficiency. As the capabilities of laser diodes have grown, so has the range of applications contemplated for them. The laser performance successes gained using quantum wells in optoelectronic devices can be extended by adopting quantum dot structures....

the present work deals with the synthesis and characterization of cds nanoparticles with good thermal stability and optical properties by a novel and simple synthetic route. the nanoparticles were synthesized via chemical precipitation method in a single reaction vessel under ambient conditions. the prepared cds nanoparticles were compared with the bulk cds. the optical properties were determin...