Interfaces between metal and semiconductor may be found almost everywhere in contemporary electronics. Often the metal is there just to serve as a contact to p-n junctions in the semiconductor. At other times, the metal-semiconductor interface itself performs essential electronic functions. Considerable scientific interest has been devoted to this latter situation since early in the century, as...

Semiconductor nanowires have become an important building block for nanotechnology. The growth of semiconductor nanowires using a metal catalyst via the vapor–liquid–solid (VLS) or vapor–solid–solid (VSS) mechanism has yielded growth directions in 〈1 1 1〉, 〈1 0 0〉 and 〈1 1 0〉 etc. In this paper, we summarize and discuss a broad range of factors that affect the growth direction of VLS or VSS gro...

This article is present the effected oxide capacitor in CMOS structure of integrated circuit level 5 micrometer technology. It has designed and basic structure of MOS diode. It establish with aluminum metallization layer by sputtering method, oxide insulator layer mode from silicon dioxide, n and p semiconductor layer, it has high capacitance concentrate. From the MOS diode structure silicon di...

We explore the possibility of coating semiconductor nanowires with metal (Ag) to reduce the size of nanowire lasers operating at photon energies around 0.8–2 eV. Our results show that the material gain of a typical III-V semiconductor in nanowire may be sufficient to compensate Joule losses of such metal as Ag. The most promising mode to achieve lasing seem to be TM01 near its cutoff. To calcul...

Classification, essential properties, important applications and developement of power semiconductor devices will be explained. Some common power semiconductor devices, power metal oxide semiconductor field-effect transistor (MOSFET), thyristor and some new power devices will be described and discussed.

Thermally drawn metal-insulator-semiconductor fibers provide a scalable path to functional fibers. Here, a ladder-like metal-semiconductor-metal photodetecting device is formed inside a single silica fiber in a controllable and scalable manner, achieving a high density of optoelectronic components over the entire fiber length and operating at a bandwidth of 470 kHz, orders of magnitude larger t...

We discuss subwavelength-scale semiconductor metal-optic resonators placed on the metal substrate with various top metal plate sizes. Albeit with large optical losses, addition of metal layers converts a leaky semiconductor nano-block into a highly-confined optical cavity. Optically pumped lasing action is observed with the extended top metal layer that can significantly suppress the radiation ...

We propose a new integrated device for spintronics application, which is based on a hybrid metal-semiconductor structure. The device consists of a Si-based p-i-n photodetector sandwiched between two layers of a ferromagnetic metal (3d ferromagnet or half-metallic compound). The photocurrent flowing in such a system is shown to depend on its magnetic configuration. This, in turn, allows controll...