The effects due to elevated temperatures on the surface plasmon (SP) at a metal–semiconductor interface are studied both experimentally and theoretically. In particular, a junction made of silver and amorphous silicon is fabricated and the interfacial plasmon is excited optically via the Kretschmann geometry. Both the reflectance and phase monitoring of the response of the junction have been st...

The electronic structure and the conductance of a carbon nanotube based metal/semiconductor/metal intramolecular junction is investigated numerically. The nature of electronic states at the interfaces and in the semiconductor section is analysed. The quantum conductance of the system is calculated in the coherent regime and its variations with energy and length are shown to be related to contri...

We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semicond...

Wurtzite structures, such as ZnO, GaN, InN and CdS, are piezoelectric semiconductor materials. A piezopotential is formed in the crystal by the piezoelectric charges created by applying a stress. The inner-crystal piezopotential can effectively tune/control the carrier separations and transport processes at the vicinity of a p–n junction or metal–semiconductor contact, which is called the piezo...

The phase noise of an oscillator with a thin-film barium strontium titanate (BST) capacitive tuning element, or varactor, is characterised and benchmarked against the same oscillator with a silicon semiconductor junction varactor. Phase noise tracks closely with varactor Q within a specific voltage range as expected. Compared to the semiconductor varactor-based oscillator, the BST-based oscilla...

This paper studies transient thermal characteristics of ?-Ga2O3 Schottky barrier diode (SBD) packaged in TO-220. Planar and metal-oxide-semiconductor (MOS) trench anode types are evaluated. Junction temperature is estimated from dependency forward conduction measuring SBD characteristics. confirms the completeness processed junction on with extracted ideal factor height SBDs. The measured devel...

Thermophotovoltaic (TPV) cells are semiconductor devices which convert radiated heat directly into electricity. This work investigates extending the operational wavelength of such devices into the long-wavelength infrared regime. Specifically, this work explores the use a barrier layer inserted into a p-n junction to suppress recombination pathways. Dark current simulations have been performed ...