Abstract Gallium nitride high electron mobility transistor (GaN HEMT) applications in high-power and high-frequency environments can lead to device temperatures due the self-heating effect, thus limiting performance reliability. In order address this problem, paper changes material structure of device. It successfully reduces maximum temperature 335 K by using a new diamond substrate, heat sink...

GaN is one of the third-generation broadband semiconductor materials developed rapidly in recent years, and Algan/GanHEMT has a broad application prospect fields high temperature, power, frequency radiation resistance, etc. In gallium nitride based electron mobility transistors have been widely used emerging industries, such as 5G technology, new energy vehicles, unmanned aircraft other fields,...

Two-dimensional electro-thermal simulations of GaN-based metal-semiconductor fieldeffect transistor are performed in the framework of the drift-diffusion model. The dependence of the hot spot temperature in transistors with many gates on the gate-to-gate pitch is studied. The case of SiC substrate is compared to the case of sapphire substrate. The ambient temperature effect on transistor perfor...

The purpose of the present study was to explore the influence of microwave heating for different periods on the primary and secondary oxidation, total oxidation as well as conjugation of stripped and non-stripped linseed oils. Color index of the oil samples was also evaluated to show changes of color during periodical heating. It was generally found that a significant increase in peroxide value...

Introduction More and more eco-feedback technology is being implemented to support people’s self-awareness regarding water, heating or energy consumption. Although eco-feedback technologies have managed to raise awareness (e.g, using visualisations [7]) about consumption, many challenges still remain. For instance, people still experience disengagement using technology [16, 1] as it is di cult ...

In this paper, a BSIMSOI RF gate resistance model for FDSOI MOSFET is introduced and verified. With the addition of the gate resistance model, the RF characteristic of FDSOI MOSFET could be modeled well. Self-heating effect (SHE) will affect RF data fitting significantly. A simple method to extract thermal resistance is proposed.