Abstract The fabrication and I-V characteristics of the novel AlGaN/GaN field effect diode are reported. This diode has a distinguishing anode structure and the relatively thick AlGaN barrier layer in contrast a conventional field-effect Schottky barrier diode (FESBD). By using fluoride-based plasma treatment, we could reduce its turn-on voltage to 0 V and decrease its leakage current at the re...

Relatively long (30 µm) high quality ZnO nanowires (NWs) were grown by the vapor-liquid-solid (VLS) technique. Schottky diodes of single NW were fabricated by putting single ZnO NW across Au and Pt electrodes. A device with ohmic contacts at both the sides was also fabricated for comparison. The current-voltage (I-V) measurements for the Schottky diode show clear rectifying behavior and no reve...

Indium oxide (In2O3) tower-shaped nanostructure gas sensors have been fabricated on Cr comb-shaped interdigitating electrodes with relatively narrower interspace of 1.5 μm using thermal evaporation of the mixed powders of In2O3 and active carbon. The Schottky contact between the In2O3 nanotower and the Cr comb-shaped interdigitating electrode forms the Cr/In2O3 nanotower Schottky diode, and the...

The formation of a Schottky barrier at the metal-semiconductor interface is widely utilised in semiconductor devices. With the emerging of novel Schottky barrier based nanoelectronics, a further microscopic understanding of this interface is in high demand. Here we provide an atomistic insight into potential barrier formation and band bending by ab initio simulations and model analysis of a pro...

A square-loop slot antenna, printed at the back surface of an extended hemispherical lens, is examined as a candidate for ( ) millimeter-wä e mm-wa ̈e integrated-circuit Schottky-diode mixers. The loop slot is etched in a microwä e substrate, and coupled to a microstrip line section printed on the other side of the substrate. A Schottky barrier diode shunted to ground is the mixing de ̈ice. The i...

We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conver...

We report emergence of a new electrical material by growing photosynthetic biofilm on a Dirac material, graphene. The material showed new conducting as well as semiconducting properties. Frequency dependent capacitive spectra further indicated presence of electrical isosbestic points(at 0.8 and 9MHz), implying two state dieletric transitions at critical frequencies. A notable reult was a Schott...

Whereas SiC switches have the overall lowest dynamic losses, they show higher static losses due to the lack of conductivity modulation and the necessary chip size limitations due to the still high SiC base material price. The frequency dependence of the total losses of the various 1200V configurations (Si-IGBT + Si freewheeling diode, Si IGBT + SiC Schottky diode, SiC-JFET cascode plus internal...