We construct spectral triples associated to Schottky–Mumford curves, in such a way that the local Euler factor can be recovered from the zeta functions of such spectral triples. We propose a way of extending this construction to the case where the curve is not k-split degenerate.

We prove the equivalence of Schottky’s theorem and the distortion theorem for planar quasiconformal mappings via the theory of holomorphic motions. The ideas lead to new methods in the study of distortion theorems for quasiconformal mappings and a new proof of Teichmüller’s distortion theorem.

In an article by Sasaki and Yoshida (2000), we encountered Schottky groups of genus 2 as monodromy groups of the hypergeometric equation with purely imaginary exponents. In this paper we study automorphic functions for these Schottky groups, and give a conjectural infinite product formula for the elliptic modular function λ.

The scalability of thin-film transistors has been well documented, but there have been very few investigations into of the effects of device scalability in Schottky diodes. Indium-gallium-zinc-oxide (IGZO) Schottky diodes were fabricated with IGZO thicknesses of 50, 150 and 250 nm. Despite the same IGZO-Pt interface and Schottky barrier being formed in all devices, reducing the IGZO thickness c...

The influence of rapid thermal annealing effect on the electrical and structural properties of Au/Cu Schottky contacts on n-InP has been investigated by the current-voltage (I-V), capacitance-voltage (C-V), auger electron spectroscopy (AES) and the X-ray diffraction (XRD) techniques. As-deposited sample has a barrier height of 0.64 eV (IV), 0.76 eV (C-V) which increases to 0.82 eV (I-V), 1.04 e...

The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative val...

The metal-insulator-semiconductor (MIS) diode is the most useful device in the study of semiconductor surfaces. The current-voltage data of the metal-insulatorsemiconductor Schottky diode are simulated using thermionic emission diffusion equation taking into account the interfacial layer parameters. The calculated current–voltage data are fitted into ideal thermionic emission diffusion equation...

The mechanism responsible of the Schottky barrier formation is anaiysed by considering a monolayer deposition of Li. Na or K on GaAs(ll0). These cases are studied by means of a free parameter consistent molecular orbital method. Che~so~tion energies. adsorption sites and Schottky barrier heights are calculated and found to be in good agreement with the experimental evidence. Our results tend to...

Todd Schumann, Sefaattin Tongay, Arthur F. Hebard Department of Physics, University of Florida, Gainesville FL 32611 This article demonstrates the formation of Schottky diodes on silicon (Si), gallium arsenide (GaAs), and 4H-silicon carbide (4H-SiC) using the semimetal graphite. The forward bias characteristics follow thermionic emission theory, and the extracted Schottky barrier heights closel...