نتایج جستجو برای: sapphire
تعداد نتایج: 3636 فیلتر نتایج به سال:
Sapphire (a-A1203) is a desirable substrate for the growth of superconducting thin films due to its low dielectric constant and the extensive interest on silicon on sapphire technology. Unfortunately there exists a strong chemical interaction between sapphire and REBa,CusO,, ( RE123 ) ceramics’-3 which complicates the growth of high-quality-thin-film ceramic superconductors. Several reports on ...
Infrared-visible sum-frequency-generation spectroscopy (SFG) is used to investigate the interfacial structure of hexadecanol (C16H33OH) and heneicosane (C21H44) in contact with polystyrene films (PS) spin coated on a sapphire substrate. The interfacial structure of hexadecanol is very different from heneicosane in contact with PS. In the crystalline state, the hexadecanol molecules are oriented...
A mechanical quality factor of 1.1× 107 was obtained for the 199Hz bending vibrational mode in a monocrystalline sapphire fiber at 6K. Consequently, we confirm that pendulum thermal noise of cryogenic mirrors used for gravitational wave detectors can be reduced by the sapphire fiber suspension.
PURPOSE To study the feasibility of black-blood contrast in native T1 mapping for reduction of partial voluming at the blood-myocardium interface. METHODS A saturation pulse prepared heart-rate-independent inversion recovery (SAPPHIRE) T1 mapping sequence was combined with motion-sensitized driven-equilibrium (MSDE) blood suppression for black-blood T1 mapping at 3 Tesla. Phantom scans were p...
Prominent progress has been made in nitride semiconductor since high bright blue LED has developed in 1993. It has also expanded to an industry after applied to white LED. These LEDs are produced by the epitaxial growth of nitride semiconductor layers on sapphire (a Al2O3) substrate. On the other hand, recording density in optical disks has increased from CD in 1980s to DVD in latter 1990s. Las...
With the aid of depth-resolved confocal microscopy, the optical crosstalk phenomenon in GaN-based micro-pixel light-emitting diodes (m-LEDs) on Si substrates are thoroughly investigated and compared with its counterpart on sapphire substrate. Noticeable optical crosstalk is invariably present in GaNon-sapphire devices as the thick transparent sapphires beneath the m-LEDs serve as optical wavegu...
We report on tests of a compensated sapphire oscillator (CSO) which shows frequency-stable operation at temperatures above 77 K[1]. The frequency stability for this oscillator shows an apparent flicker floor of 7.5×10 for measuring times between 3 and 10 seconds, and stability better than 2×10 for all measuring times between 1 and 100 seconds. These values are approximately the same as for the ...
Light-emitting diodes (LEDs) become an attractive alternative to conventional light sources due to high efficiency and long lifetime. However, different material properties between GaN and sapphire cause several problems such as high defect density in GaN, serious wafer bowing, particularly in large-area wafers, and poor light extraction of GaN-based LEDs. Here, we suggest a new growth strategy...
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