نتایج جستجو برای: sacrificial
تعداد نتایج: 2160 فیلتر نتایج به سال:
This paper presents a successful method for releasing high aspect ratio SU-8 micro-structures by the use of positive photoresist (AZ 4620) as sacrificial layer. The AZ 4620 photoresist sacrificial layer was dissolved by the SU-8 developer (propylene glycol monomethyl ether acetate). Thus, this process reduces the need for complex microfabrication steps and equipments which are otherwise require...
Although computer-aided design and manufacture techniques have shown some promising applications in the fabrication of crowns, inlays, and maxillofacial and oral surgery, the field of removable prosthodontics has not embraced these technologies so far. This article describes the development and investigation of computer-aided techniques that may eventually enable prosthodontic procedures such a...
aluminum anodes have been widely used in the cathodic protection of marine structures. however there are conditions in which these anodes become passivated or face some localized or unwanted corrosion, which influences their efficiency. addition of alloying elements such as zn and in not only have improved the efficiency of the anodes but also the effect of casting parameters such as ultra melt...
Using the cavity method we consider the learning of noisy teachergenerated examples by a nonlinear student perceptron. For insufficient examples and weak weight decay, the activation distribution of the training examples exhibits a gap for the more difficult examples. This illustrates that the outliers are sacrificed for the overall performance. Simulation shows that the picture of the smooth e...
Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors. Ba...
In this paper, we investigate the optimization of tensile strain caused by thermal oxidation in a doubly-clamped silicon nanowire FET to enhance the mobility of its carriers. Spacer technology combined with sacrificial oxidations was used to fabricate ≈ 100 nm wide nanowires. The temperature and the duration of sacrificial wet oxidation are the main parameters that determine the induced strain....
A novel Silicon Sacrificial Layer Dry Etching (SSLDE) technique using sputtered amorphous or LPCVD polycrystalline silicon as sacrificial layers and a dry fluorine-based (SF6) plasma chemistry as releasing process is reported with a detailed experimental study of the release etching step. The process is capable of various applications in surface micromachining process, and can be applied in fab...
The fabrication of SiC MEMS pressure sensor based on novel vacuum-sealed method is presented in this paper. The sensor was fabricated using surface micromachining. Due to its excellent mechanical properties and high chemical resistance, PECVD (Plasma Enhanced Chemical Vapor Deposition) SiC was chosen as structural material. Polyimide is the sacrificial layer which solve stiction problem in proc...
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