— Various model parameter calculation equations of RF CMOS inductors are compared. The calculation equations are using as variables either Y, Z-parameters or S-parameters. Results are based on on-wafer RF S-parameter measurements of a 3.75 turn spiral inductor fabricated in AMIS 0.7 μm CMOS DM1P n-well technology. Results obtained with calculation equations for a differentially driven inductor ...

We develop a covariance-matrix-based uncertainty analysis for vector-network-analyzer scattering-parameter measurements. The covariance matrix captures all of the measurement uncertainties and statistical correlations between them. This allows the uncertainties of vector-network-analyzer scattering-parameter measurements to be propagated into the uncertainties of other quantities derived from s...

An efficient measurement methodology is proposed to construct the scattering parameters of a multi-port device using a four-port vector network analyzer (VNA) without the external un-terminated ports. By using the four-port VNA, the reflected waves from the un-terminated ports could be minimized. The proposed method significantly enhances the accuracy of the S-parameters with less number of mea...