The temperature dependent DC=RF performance of Si-based resonant interband tunnelling diodes (RITDs) grown by low temperature molecular beam epitaxy was studied. Both DC and RF performance were measured at various temperatures from 20 to 150 C. At 20 C, the RITD exhibits a peak current density ( Jp) of 22 kA=cm 2 with peak-to-valley current ratio (PVCR) of 2.0. The maximum resistive cutoff freq...

Fundamental oscillations up to 1.08 THz with the output power of 5.5 microwatts was achieved in GalnAs/AlAs resonant tunneling diodes (RTDs) at room temperature. The graded emitter, thin barriers, and high-indium-composition transit layers were introduced to reduce the tunneling and transit delays. The first two of these structures are the same as those in RTDs oscillating at 1.04 THz reported ...

Resonant tunnelling is studied numerically and analytically with the help of a three-well quantum one-dimensional time-independent model. The simplest cases are considered where the three-well potential is polynomial or piecewise constant.

Radiation from antennas integrated with indium phosphide (InP)-based resonant tunnelling diode (RTD) oscillators is mainly through the substrate because of the effects of the large dielectric constant. Therefore, hemispherical lenses are used to extract the signal from the backside of the substrate. In this study the authors present a broadband bow-tie slot antenna with a tuning stub which is d...

The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The reso...

We have determined the Landé factor g∗ in self-organized InAs quantum dots using resonant-tunnelling experiments. With the magnetic field applied parallel to the growth direction z we find g∗ ‖ = 0.75 for the specific dot investigated. When the magnetic field is tilted away by θ from the growth axis, g∗ gradually increases up to a value g∗ ⊥ = 0.92 when B ⊥ z. Its angular dependence is found to...