A novel epitaxy-on-electronics (EoE) technology, developed at MIT, allows the integration of 111-V heterostructures and commercial VLSI GaAs circuits. We have designed a monolithic resonant-tunneling diode(RTD) based static random access memory which uses this technique. We review both the EoE process and the design and epitaxial growth techniques for high performance In,Gal-,As/AIAs RTDs suita...

The application of selective resonant tunneling model is extended from d 1 t fusion to other light nucleus fusion reactions, such as d 1 d fusion and d 1 3He. In contrast to traditional formulas, the new formula for the cross-section needs only a few parameters to fit the experimental data in the energy range of interest. The features of the astrophysical S-function are derived in terms of this...

A third order harmonic oscillator has been proposed based on the resonant tunneling diode pair oscillators. This oscillator has significant advantages, good stability of the oscillation frequency against the load impedance change together with capability to output higher frequencies. Proper circuit operation has been demonstrated using circuit simulations. It has been also shown that the output...

We investigate Andreev reflection (AR) resonant tunneling through a precessing spin which is coupled to a normal metallic lead and a superconducting lead. The formula of the AR conductance at zero temperature is obtained as a function of chemical potential and azimuthal angle of the spin precessing by using the nonequilibrium Green function method. It is found that as the local spin precesses i...

Transport through molecular magnets is studied in the regime of strong coupling to the leads. We consider a resonant-tunneling model where the electron spin in a quantum dot or molecule is coupled to an additional local, anisotropic spin via exchange interaction. The two opposite regimes dominated by resonant tunneling and by Kondo transport, respectively, are considered. In the resonant-tunnel...

Variable-area resonant tunneling diodes have been fabricated using a process in which the lateral confinement is produced by an in-plane implanted gate. The basic operation of such devices is discussed, and the lateral confinement shown by both measurements and numerical modeling to be very nearly symmetrical about the resonant tunneling diode (RID) barriers. Fine structure has been observed ne...

Dynamic power dissipation is an important aspect of resonant tunneling device circuit design, especially if clock frequencies beyond 1 GHz are intended. In this paper we investigate the different sources of power dissipation of a dynamic resonant tunneling device logic family. Due to the self-latching behavior of the gates and the bitlevel pipelined circuit style an adiabatic clocking scheme is...

Research in graphene-based electronics is recently focusing on devices based on vertical heterostructures of two-dimensional materials. Here we use density functional theory and multiscale simulations to investigate the tunneling properties of single- and double-barrier structures with graphene and few-layer hexagonal boron nitride (h-BN) or hexagonal boron carbon nitride (h-BC2N). We find that...

An analytical expression for the electron tunneling time has been derived for symmetrical rectangular double-barrier structures. It gives values of the tunneling time equal to those calculated by the dwell time method for the resonant tunneling state. The obtained tunneling time is given by the sum of the time connected with the barrier layer width and the time connected with the well layer wid...

The electronic conductance at zero temperature through a quantum wire with side-connected asymmetric quantum ring (as a scatter system) is theoretically studied using the non-interacting Hamiltonian Anderson tunneling method. In this paper we concentrate on the configuration of the quantum dot rings. We show that the asymmetric structure of QD-scatter system strongly influences the amplitude an...