An approach for fabricating sub-wavelength antireflective structures on SiC material is demonstrated. A time-efficient scalable nanopatterning method by rapid thermal annealing of thin metal film is applied followed by a dry etching process. Size-dependent optical properties of the antireflective SiC structures have been investigated. It is found that the surface reflection of SiC in the visibl...

Rapid firing processes are well known to allow improvements in solar cell contacts, particularly for the rear contact. Previous results characterizing the quality of a rear aluminum-alloyed back surface field have measured the effective surface recombination velocity, which depends not only on the material parameters of the back surface field, but also on the base doping. This paper shows that ...

Several advances in materials research have been made due to the wide array of tools currently available for the processing of materials: plasmas, electron beams, ion beams and lasers. The area of material science is fortunate to have seen the development of these tools over the years, be it for new bulk materials, coatings or for surface modification. Several applications have benefited and ma...

Disordered fcc ~face-centered-cubic! @100# fiber-textured CoPt thin films with thicknesses of 20–40 nm were deposited on a nonmagnetic sputtered MgO seed layer with and without a Ag intermediate layer. These were subsequently annealed at 600–750 °C for 5–10 min using rapid thermal annealing ~RTA!. The structural variants were determined to coexist in the in-plane and normal to the plane directi...

Based on fluoride-based plasma treatment of the gate region in AlGaN/GaN HEMTs and post-gate rapid thermal annealing (RTA), enhancement mode (E-mode) AlGaN/GaN HEMTs with low on-resistance and low knee-voltage were fabricated. The fabricated E-mode AlGaN/GaN HEMT with 1 μm-long gate exhibits a threshold voltage of 0.9 V, a kneevoltage of 2.2 V, a maximum drain current density of 310 mA/mm, a pe...

recently, as the result of the development in modern imaging, computerized three dimensional data processing and advanced engineering techniques, an prosthesis that match the skeletal anatomy can be accurately designed from computer aided design (cad) technique and the physical model of prosthesis or skull replica can be produced through rapid prototyping (rp), rapid tooling (rt), and computer ...

Emissivity is a critical parameter in the rapid thermal processing ~RTP! of semiconductors for temperature control and thermal modeling. It is often considered as a material property that depends on the sample temperature and surface finishing. For a silicon wafer placed in a radiation environment such as a RTP chamber, however, the ambient photons emitted from lamps create electron-hole pairs ...

High-power arc lamp design has enabled ultrahigh-temperature sUHTd annealing as an alternative to conventional rapid thermal processing sRTPd for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction...