In this work, different dielectric caps were deposited on the GaAs/AlGaAs quantum well ~QW! structures followed by rapid thermal annealing to generate different degrees of interdiffusion. Deposition of a layer of GaxOy on top of these dielectric caps resulted in significant suppression of interdiffusion. In these samples, it was found that although the deposition of GaxOy and subsequent anneali...

A gradient annealing cell has been developed for the high-throughput study of thermal annealing effects on thin-film libraries in different environments. The inexpensive gradient annealing unit permits temperature gradients as large as 28 °C∕mm and can accommodate samples ranging in length from 13 mm to 51 mm. The system was validated by investigating the effects of annealing temperature on the...

Strain-free GaAs/Al0.33Ga0.67As quantum rings are fabricated by droplet epitaxy. Both photoresponse and photoluminescence spectra confirm optical transitions in quantum rings, suggesting that droplet epitaxial nanomaterials are applicable to intermediate band solar cells. The effects of post-growth annealing on the quantum ring solar cells are investigated, and the optical properties of the sol...

This paper reports the recent progress on the development of double-cantilever infrared (IR) detectors, including the fabrication, the post-process urvature control, and also the first-time demonstration of thermal detection using capacitive-based IR focal plane arrays (FPAs). In this work, implified double-cantilever IR FPAs based on bimaterial SiNx/Al and Al/SiNx cantilevers are fabricated us...

TiO2/p-Si paste heterojunction structure, which showed photovoltaic characteristics, was successfully fabricated by rapid thermal annealing (RTA). To reduce the oxidation of Si during RTA, Ti sputtered on p-type paste. It found that RTA condition 1200 °C/2 s enabled to achieve lowest and best crystallization conditions, as well transformation layer into rutile TiO2 phase. observed some molten g...