نتایج جستجو برای: quantum well laser
تعداد نتایج: 1937385 فیلتر نتایج به سال:
This paper reports the experimental characterization of the noise performance of monolithically integrated quantum dot and quantum well 10GHz passively mode locked laser diodes. Keywords-passive mode locking, quantum dot, quantum well,
This paper describes a novel concept for laser-based interrogation, communication, and navigation between multiple spacecraft platforms using a gimbaled laser source on a pursuer spacecraft and a target board populated with retromodulators (modulating retroreflectors) integrated on a host spacecraft. The combined laser source and retroreflectors can provide centimeter-level relative positioning...
Articles you may be interested in Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy Appl. Temperature modulation molecularbeam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantumwell lasers Periodic index separate confinement heterostructure InGa...
Strained layer InGaAs-GaAs single-quantum-well buried heterostructure lasers were fabricated by a hybrid molecular beam epitaxy and liquid phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser ( L = 425 pm) and 0.75 mA for a coated laser ( R 0.9, L = 198 pm), were obtained. A 3 dB modulation bandwidth of 7.6 GHz was demonstrated at low bias current (14 mA).
.............................................................................................................................. ii Acknowledgements ............................................................................................................ iii Table of
چکیده ندارد.
A single waveguide laser with two separately addressed sections is fabricated using selective area intermixing of InGaAsP multiple quantum well grown on InP substrate. The selective intermixing of quantum wells is achieved by capping the two sections with PECVD grown silicon nitride and silicon dioxide respectively followed by rapid thermal annealing the device at 750°C for 30s prior to the fab...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید