This work systematically investigates the influence of InAs growth conditions and superlattice parameters on the optical properties of InAs/GaAs quantum dot QD superlattice structures grown by molecular beam epitaxy. Using surface photovoltage spectroscopy, one directly obtains the absorption spectra up to the highest confined QD levels at room temperature. Based on photoluminescence measuremen...

All-inorganic cesium lead bromide (CsPbBr3) perovskite quantum dots (QDs) have recently emerged as highly promising solution-processed materials for nextgeneration light-emitting applications. They combine the advantages of QD and perovskite materials, which makes them an attractive platform for achieving high optical gain with high stability. Here, we report an ultralow lasing threshold (0.39 ...

High pulse repetition rate (≥ 10 GHz) diode-pumped solid-state lasers, modelocked using semiconductor saturable absorber mirrors (SESAMs) are emerging as an enabling technology for high data rate coherent communication systems owing to their low noise and pulse-to-pulse optical phase-coherence. Quantum dot (QD) based SESAMs offer potential advantages to such laser systems in terms of reduced sa...

The self-assembled InAs quantum dots (QDs) are the subject of substantial interest during last fifteen years due to both fundamental scientific and application reasons. In these systems, the strong localization of an electronic wave function leads to an atomic-like electronic density of states and permits to realize the novel and improved photonic and electronic devices. Microlectronic and opto...

We report for the first time direct growth of quantum dot (QD) lasers with electrical pumping on 300 mm Si wafers both a planar template and in-pocket in-plane photonic integration. O-band five QD layers were grown molecular beam epitaxy (MBE) in reactor then fabricated into standard Fabry–Perot ridge waveguide cavities. Edge-emitting are demonstrated high yield reliable results ready commercia...

The three important factors that affect the output power and temperature of fiber lasers (FLs) were investigated in a large mode area step-index FL under high-power operation. Photodarkening (PD), quantum defect (QD), background loss cause increases FLs reductions beam quality, stability, power. PD coefficients have different values for signal (laser) or pump wavelength. But QD depends on diffe...

We demonstrate a new hierarchical self-assembly strategy for the formation of photonic arrays containing quantum dots (QDs), in which sequential self-assembly steps introduce organization on progressively longer length scales, ranging from the nanoscale to the microscale regimes. The first step in this approach is the self-assembly of diblock copolymers to form block ionomer reverse micelles (S...

Quantum dots (QD) of various kinds are one of the most important entities in nanotechnology due to their potential applications as lasers, memory storage devices or building blocks for quantum computation. Understanding the electronic structure of QDs is not only important for such application, but also of great interest in fundamental physics. As a consequence, there have been a number of stud...

We develop a general approach to including the internal optical loss in the description of semiconductor lasers with a quantum-confined active region. We assume that the internal absorption loss coefficient is linear in the free-carrier density in the optical confinement layer and is characterized by two parameters, the constant component and the net cross-section for all absorption loss proces...

We report on progress in growth and applications of submonolayer (SML) quantum dots (QDs) in high-speed vertical-cavity surface-emitting lasers (VCSELs). SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Verticall...