Failure of packaged polysilicon micro-electro-mechanical systems (MEMS) subjected to impacts involves phenomena occurring at several length-scales. In this paper we present a multi-scale finite element approach to properly allow for: (i) the propagation of stress waves inside the package; (ii) the dynamics of the whole MEMS; (iii) the spreading of micro-cracking in the failing part(s) of the se...

The calibration of a new submicrometer magnification standard for electron microscopes is described. The new standard is based on the width of a thin thermal-oxide film sandwiched between a silicon single-crystal substrate and a polysilicon capping layer. The calibration is based on an ellipsometric measurement of the oxide thickness before the polysilicon layer is deposited on the oxide. The u...

This paper propose a new design and analysis of MEMS sensor array based on thermal stress and electric current properties. The COMSOL Multiphysics 4.3 software is used to design the sensor array of the sensing layer. The material selection is done based on the thermal analysis of the sensor array. The polysilicon yield a maximum displacement of 0.00143μm and also it is suitable for human skin. ...

SiGe heterojunction bipolar transistors (HBTs) have been fabricated using selective epitaxy for the Si collector, followed in the same growth step by nonselective epitaxy for the p SiGe base and n-Si emitter cap. DC electrical characteristics are compared with cross-section TEM images to identify the mechanisms and origins of leakage currents associated with the epitaxy in two different types o...

We measure end-of-line polysilicon waveguide propagation losses of ~6-15 dB/cm across the telecommunication O-, E-, S-, C- and L-bands in a process representative of high-volume product integration. The lowest loss of 6.2 dB/cm is measured at 1550 nm in a polysilicon waveguide with a 120 nm x 350 nm core geometry. The reported waveguide characteristics are measured after the thermal cycling of ...

Here, I review the development of a polysilicon photonic platform that is optimized for integration with electronics fabricated on bulk silicon wafers. This platform enables large-scale monolithic integration of silicon photonics with microelectronics. A single-polysilicon deposition and lithography mask were used to simultaneously define the transistor gate, the low-loss waveguides, the deplet...

In this paper, an industrially-oriented two-scale approach is provided to model the drop-induced brittle failure of polysilicon MEMS sensors. The two length-scales here investigated are the package (macroscopic) and the sensor (mesoscopic) ones. Issues related to the polysilicon morphology at the micro-scale are disregarded; an upscaled homogenized constitutive law, able to describe the brittle...

A study is made of germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors made by germanium implantation. Implanted Ge is found to diffuse from the single-crystal silicon substrate into deposited polysilicon emitter layers during rapid thermal anneal at 1045 °C. Measurements of germanium diffusivity in polycrystalline silicon are reported at temperatures between ...

Full silicidation ~FUSI! of polysilicon gates promises to be a simple approach for formation of metal gate electrodes for highly scaled complementary metal oxide semiconductor ~CMOS! transistors. Devices have been reported with several different silicides, prominently with nickel. NiSi was shown to produce different work functions, covering a large portion of silicon bandgap, in relation to a d...

Angular electrostatic microactuators suitable for use in a two-stage servo system for magnetic disk drives have been fabricated from molded chemical-vapor-deposited (CVD) polysilicon using the HexSil process. A 2.6-mm-diameter device has been shown to be capable of positioning the read/write elements of a 30% picoslider over a 1m range, with a predicted bandwidth of 2 kHz. The structures are fo...