Carrier density is one of the most important parameters in changing the electronic properties of materials. The most useful and conventional way to control the carrier density is chemical syntheses. On the other hand, physicists and electronic engineers have developed a field effect transistor (FET) device for changing the carrier density by electric fields. Furthermore, by introducing a liquid...

Thin films of the perfluorinated phthalocyanines F16PcVO and F16PcCu were grown on insulator substrates by physical vapor deposition under high vacuum conditions to study their growth and electrical properties, analyzing them as possible candidates for n-type channel materials in organic field effect transistors. As insulator substrates, mica, amorphous SiO2, poly(styrene), poly(vinylchloride),...

One of the important factors influencing outdoor insulators performance is pollution phenomenon. The pollution, especially during humidity condition, reduces superficial resistance of insulator and lead to a flow of Leakage Currents (LC) on the insulator surface, which may result in total flashover. The LC characteristics are affected by parameters such as nature and severity of pollution. Loca...

This study reports the manufacturing of silicon-on-polymer (SOP). It describes transfer a 200 mm diameter silicon thin film from silicon-on-insulator (SOI) substrate to flexible polymer. The thickness single-crystal was less than nm, and achieved by bonding SOI wafer temporary carrier with an adhesive Various parameters were investigated: adherence stack, temperature bonding, carrier, Si thickn...

We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (10(15) cm(-2)) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 x 10(6) A/cm(2), and high metallic conductivities, 10(4) S/cm, in the FET channel; at 4....