نتایج جستجو برای: piezoelectric semiconductor
تعداد نتایج: 74511 فیلتر نتایج به سال:
In this work the electron mobility of AlN Wurtzite and AlN Zincblende semiconductor compounds were calculated using iterative method in range of 100-600 K. We compare polar optic phonon scattering, deformation-potential acoustic phonon scattering, piezoelectric scattering and impurity scattering mechanisms. Boltzmann transport equation was solved using iterative method. In addition, we took int...
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
This paper presents an exact closed-form solution for the Eshelby problem of polygonal inclusion in anisotropic piezoelectric fulland half-planes. Based on the equivalent body-force concept of eigenstrain, the induced elastic and piezoelectric 4elds are 4rst expressed in terms of line integral on the boundary of the inclusion with the integrand being the Green’s function. Using the recently der...
We have applied the perturbation theory for calculating the piezoelectric potential distribution in a nanowire (NW) as pushed by a lateral force at the tip. The analytical solution given under the first-order approximation produces a result that is within 6% from the full numerically calculated result using the finite element method. The calculation shows that the piezoelectric potential in the...
This paper describes a fully integrated acoustic sensor that combines high sensitivity, wide frequency range and low cost of batch processed miniaturized silicon components. A sputtered piezoelectric ZnO layer transforms the mechanical deflection of a thin-etched-Si diaphragm into a piezoelectric charge. ZnO has transparent and conductive properties, which makes it attractive for a variety of s...
Diluted ferromagnetic III-V semiconductors typically show a high degree of compensation. Compensation is connected to the presence of comparable densities of charged defects of either sign. This naturally leads to the development of strong correlations between defect positions during growth and annealing. We show that these correlations are required to understand the experimentally observed tra...
There is extensive recent experimental evidence of spontaneous superlattice (SL) formation in various II-VI and III-V semiconductors. Here we propose an atomistic mechanism responsible for SL formation, and derive a relation predicting the temperature, flux and miscut dependence of the SL layer thickness. Moreover, the model explains the existence of a critical miscut angle below which no SL is...
Phonon-assisted singlet-singlet relaxation in semiconductor quantum dot molecules is studied theoretically. Laterally coupled quantum dot structures doped with two electrons are considered. We take into account interaction with acoustic phonon modes via deformation potential and piezoelectric coupling. We show that piezoelectric mechanism for the considered system is of great importance and for...
A fundamental problem that miniaturized systems, such as biomedical implants, face is limited space for storing energy, which translates to short operational life. Harvesting energy from the surrounding environment, which is virtually a boundless source at these scales, can overcome this restriction, if losses in the system are sufficiently low. To that end, the 2-μm bi-complementary metal-oxid...
We present an eight-band k ·p -model for the calculation of the electronic structure of wurtzite semiconductor quantum dots (QDs) and its application to indium gallium nitride (InxGa1−xN) QDs formed by composition fluctuations in InxGa1−xN layers. The eight-band k·p -model accounts for strain effects, piezoelectric and pyroelectricity, spin-orbit and crystal field splitting. Exciton binding ene...
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