نتایج جستجو برای: phototransistor

تعداد نتایج: 205  

Journal: :Advanced electronic materials 2022

Phototransistor Devices devices based on individual single cubic phase CsPbBr3 perovskite nanowires are fabricated and thoroughly studied. The unique charge transport pathways along the axial direction hold great potential in information technology. More details can be found article number 2200727 by Johnny C. Ho co-workers.

2006
Jae-Young Kim Chang-Soon Choi Woo-Young Choi Hideki Kamitsuna Minoru Ida Kenji Kurishima

A 30GHz optically injection-locked self-oscillating optoelectronic mixer (OIL-SOM) is implemented with a high-performance InP/InGaAs heterojunction phototransistor. The sub-harmonic conversion efficiency and phase noise characteristics of OIL-SOM are investigated and used for analyzing OIL-SOM-based 60GHz radio-on-fiber downlink data transmission performance. The OIL-SOM characteristics provide...

2016
Yajia Yang Yufei Mao Kyeong-Sik Shin Chi On Chui Pei-Yu Chiou

Optoelectronic tweezers (OET) has advanced within the past decade to become a promising tool for cell and microparticle manipulation. Its incompatibility with high conductivity media and limited throughput remain two major technical challenges. Here a novel manipulation concept and corresponding platform called Self-Locking Optoelectronic Tweezers (SLOT) are proposed and demonstrated to tackle ...

2017
Mohsen Rezaei Min-Su Park Chee Leong Tan Cobi Rabinowitz Skyler Wheaton Hooman Mohseni

In this work, we have proposed a model for the ultimate physical limit on the sensitivity of the heterojunction bipolar phototransistors (HPTs). Based on our modeling we have extracted the design criteria for the HPT for high sensitivity application. HPT with the submicron emitter and base area has the potential to be used for the low number photon resolving in near-infrared (NIR) wavelength. H...

2016
Sven Bader

We present a concept for optically controlled current confinement in vertical-cavity surfaceemitting lasers (VCSELs) based on the monolithic integration of a phototransistor. Omitting the usual oxide aperture improves the manufacturability and prevents built-in strain near the active zone. Measured continuous-wave operation characteristics of fabricated devices show hysteresis loops in the curr...

Journal: :Nanoscale 2014
Wenbin Niu Liap Tat Su Rui Chen Hu Chen Yi Wang Alagappan Palaniappan Handong Sun Alfred Iing Yoong Tok

The enhancement of upconversion luminescence of lanthanide-ion doped fluoride upconversion nanoparticles (UCNPs) is particularly important and highly required for their myriad applications in sensing, photoelectronic devices and bio-imaging. In this work, the amplification of luminescence in NaYF4:Yb/Er and NaYF4:Yb/Tm UCNPs in close proximity to the three-dimensional photonic crystal (3D PC) s...

2012
C. M. M. Paschoal L. A. P. Santos

In this study three commercial semiconductor devices were characterized in the laboratory for computed tomography dosimetry: one photodiode and two phototransistors. It was evaluated four responses to the irradiation: dose linearity, energy dependence, angular dependence and loss of sensitivity after X ray exposure. The results showed that the three devices have proportional response with the a...

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