Charge-coupled device (CCD) technology had been leading the field of solid-state imaging for over two decades, in terms of production yield and performance until a relatively new image sensor technology called active pixel sensor (APS) (Fossum, 1993), using existing CMOS facilities and processes, emerged as a potential replacement in the early 1990s. While CMOS APS technology was originally con...

A model of a low noise high quantum efficiency n+np Germanium Photodiode utilizing ion implantation technique and subsequent drive-in diffusion in the n layer is presented. Numerical analysis is used to study the influence of junction depth and bulk concentration on the electric field profile and quantum efficiency. The performance of the device is theoretically treated especially at the wave-l...

Introduction Avalanche photodiode detectors (APD) have and will continue to be used in many diverse applications such as laser range finders, data communications or photon correlation studies. This paper discusses APD structures, critical performance parameter and excess noise factor. For low-light detection in the 200to 1150-nm range, the designer has three basic detector choices the silicon P...

Articles you may be interested in Low-noise AlInAsSb avalanche photodiode Appl. Enhanced frequency response associated with negative photoconductance in an InGaAs/InAlAs avalanche photodetector Appl.

in this paper, we calculate electron and hole impactionization coefficients in in0.52al0.48as using a monte carlo modelwhich has two valleys and two bands for electrons and holesrespectively. also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein in0.52al0.48as pin avalanche photodiodes. to validate themodel, we compare our simulat...

We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, ...

In this work we present a high-speed optical receiver with external large-area photodiode. The optical receiver is realized in 0.35μm SiGe BiCMOS technology. The input circuit is a two-transistor transimpedance amplifier using an common-emitter and an emitter-follower configuration. An external silicon PIN photodiode of a squared area of 0.25mm2 with a rise time of 0.4ns at 850nm light is used....

A wide dynamic range CMOS image sensor based on a new active pixel structure with a pinned photodiode is proposed and evaluated with device simulations. The proposed pixel device has a linear and a logarithmic characteristics in low and high illumination region, respectively. The technique of direct detection of photodiode potential leads to a wide logarithmic response compared with the convent...