GaN avalanche photodiodes APDs were grown on both conventional sapphire and low dislocation density free-standing FS c-plane GaN substrates. Leakage current, gain, and single photon detection efficiency SPDE of these APDs were compared. At a reverse-bias of 70 V, APDs grown on sapphire substrates exhibited a dark current density of 2.7 10−4 A /cm2 whereas APDs grown on FS-GaN substrates had a s...

We have evaluated the tunneling contact resistivity based on numerical calculation of tunneling current density across an AlGaN barrier layer in non-polar AlGaN/GaN heterostructures. In order to reduce the tunneling contact resistivity, we have introduced an n-AlXGa1−XN layer between an n-GaN cap layer and an i-AlGaN barrier layer. The tunneling contact resistivity has been optimized by varying...

Two Rokumi-jio-gan-containing prescriptions (Hachimi-jio-gan and Bakumi-jio-gan) were selected to examine their actions in nephrectomized rats. Each prescription was given orally to rats for 10 weeks after the excision of five-sixths of their kidney volumes, and its effect was compared with non-nephrectomized and normal rats. Rats given Hachimi-jio-gan and Bakumi-jio-gan showed an improvement o...

Gigaxonin mutations cause the fatal human neurodegenerative disorder giant axonal neuropathy (GAN). Broad deterioration of the nervous system in GAN patients is accompanied by massive disorganization of intermediate filaments (IFs) both in neurons and many non-neuronal cells. With newly developed antibodies, gigaxonin is now shown to be expressed at extremely low levels throughout the nervous s...

1 Introduction GaN-based wide-band gap materials continue to attract significant attention as promising candidates for the next generation of microwave communication systems and optoelectronic devices [1–3]. For all envisioned applications of GaN materials, it is important to effectively remove the generated heat. Thus, the thermal conductivity K value of GaN is a very important characteristic....

The analysis of parametric and non-parametric uncertainties very large dynamical systems requires the construction a stochastic model said system. Linear approaches relying on random matrix theory Soize (2000) principal component can be used when undergo low-frequency vibrations. In case fast dynamics wave propagation, we investigate generator boundary conditions for submodels by using machine ...

The family of nitride semiconductors has had a profound influence on the development of optoelectronics for a large variety of applications. However, as of yet there are no native substrates commercially available that are grown by liquid phase methods as with Si and GaAs. As a result, the majority of electronic and optoelectronic devices are grown heteroepitaxially on sapphire and SiC. This Ph...

In recent works, both sparsity-based methods as well as learningbased methods have proven to be successful in solving several challenging linear inverse problems. However, sparsity priors for natural signals and images suffer from poor discriminative capability, while learning-based methods seldom provide concrete theoretical guarantees. In this work, we advocate the idea of replacing hand-craf...