Doping of low-dimensional graphitic materials, including graphene, graphene quantum dots and single-wall carbon nanotubes with nitrogen, sulfur or boron can significantly change their properties. We report that simple fluorination followed by annealing in a dopant source can superdope low-dimensional graphitic materials with a high level of N, S or B. The superdoping results in the following do...

ii by using insulation material correctly, a more uniform temperature distribution can be obtained. A model for the growth of SiC is used to predict growth rates at various process parameters. A number of possible factors influencing the growth rate are investigated using this model. The importance of including thermal diffusion and the effect of etching by hydrogen is shown, and the effect of ...

In this paper, we address two different aspects relevant to the growth of GaN. The first part concerns alternative nitrogen source whereas in the second part, we report experimental results on Mg doping. Several nitrogen precursors have been used for the growth of GaN in MOVPE. To produce active species from N2 or NH3, a remote Plasma Enhanced Chemical Vapour Deposition (RPECVD) process has bee...

Recent experiments have shown that nitrogen doping enhances capacitance in carbon electrode supercapacitors. However, a detailed study of the effect of N-doping on capacitance is still lacking. In this paper, we study the doping concentration and the configuration effect on the electric double-layer (EDL) capacitance, quantum capacitance, and total capacitance. It is found that pyridinic and gr...

An effective, template-free synthesis methodology has been developed for preparing mesoporous nitrogen-doped SrTiO(3) (meso-STON) using glycine as both a nitrogen source and a mesopore creator. The N-doping, large surface area and developed porosity endow meso-STON with excellent activity in visible-light-responsive photodegradation of organic dyes.

Nitrogenated and hydrogenated amorphous carbon (a-C:H:N) films have been deposited by a plasma beam source using a gas mixture of C2H2 , Ar and N2 . The Ar/C2H2 ratio is kept constant at a ratio of 3, with the nitrogen flow allowed to vary. Nonnitrogenated films, with Ar/C2H2 ratios of 3 and 6 were also deposited and analyzed before attempting to identify the modifications to the microstructura...

Single layers of WS2 nanoplates are uniformly embedded in nitrogen-doped carbon nanofibers (WS2@NCNFs) via a facile electrospinning method. Crystallization of the single-layered WS2 nanoplates and in situ nitrogen doping into the carbon nanofibers were simultaneously accomplished during a two-step heat treatment. The distinctive structure of the WS2@NCNFs enables outstanding electrochemical per...

Selective local N-doped TiO(2) electrodes were fabricated using a pulsed laser deposition method. Different from the uniform nitrogen-doping in TiO(2) electrodes showing the diminution of IPCE in the UV light region, the inner nitrogen-doped TiO(2) electrode uniquely enhanced IPCE in the UV light region significantly (up to 95% at 320 nm, 1.23 V vs. SHE).

N-type AlxGa12xN exhibits a dramatic decrease in the free-carrier concentration for x>0.40. Based on first-principles calculations, we propose that two effects are responsible for this behavior: ~i! in the case of doping with oxygen ~the most common unintentional donor!, a DX transition occurs, which converts the shallow donor into a deep level; and ~ii! compensation by the cation vacancy (VGa ...