In this study interaction of phenothiazine sulfur dye with (5, 5) armchair open-end boron nitride nanotubes (BNNTs) in interaction (with a length of 7 Å) was investigated. The impacts of the estereoelectronic effect associated with donor-acceptor electron delocalizations, dipole-dipole interactions and total steric exchange energies on the structural and electronic properties and reactivity of ...

Defects play a key role in determining the properties and technological applications of nanoscale materials and, because they tend to be highly localized, characterizing them at the single-defect level is of particular importance. Scanning tunnelling microscopy has long been used to image the electronic structure of individual point defects in conductors, semiconductors and ultrathin films, but...

Suitable tight-binding models for wurtzite III–V (non-nitride) and group-V materials are presently missing in the literature. Many commonly used nearest neighbor cubic-zincblende semiconductors result highly inaccurate band structures when transferred to hexagonal polytypes. Wurtzite parameters would be of use modeling nanowires that primarily condense into either or zincblende crystal phases. ...

Please cite this article in press as: R. Dahal et a Er-doped III-nitride semiconductors have emerged as very attractive materials to achieve photonic devices with multiple functionalities for photonic integrated circuits (PICs). Optical sources and amplifiers based on these materials, particularly GaN and InGaN alloys, can operate at 1.54 lm and are expected to be temperature insensitive and ha...

Tunnel junctions could have a great impact on gallium nitride and aluminum nitride-based devices such as light-emitting diodes and lasers by overcoming critical challenges related to hole injection and p-contacts. This paper demonstrates the use of GdN nanoislands to enhance interband tunneling and hole injection into GaN p-n junctions by several orders of magnitude, resulting in low tunnel jun...

Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice-matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-e...

Hydrogen production via photocatalytic water splitting using sunlight has enormous potential in solving the worldwide energy and environmental crisis. The key challenge in this process is to develop efficient photocatalysts which must satisfy several criteria such as high chemical and photochemical stability, effective charge separation and strong sunlight absorption. The combination of differe...

Recent development advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many utility applications of power electronics are at a point that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To o...

Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spontaneous and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of investigating scaling properties of gate-stacks consisting atomic-layer deposited Al2O3/III-Nitride heterojunctions, we find interface charges that appear closely linked to the polarization charges of the unde...

Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely establishe...