نتایج جستجو برای: nitride aluminum
تعداد نتایج: 64159 فیلتر نتایج به سال:
In this paper, the temperature dependent electrical measurements by employing a Quantum Focus Instrument (QFI) and analytical analysis were presented and applied to Aluminum Gallium Nitride, Gallium Nitride (AlGaN-GaN) High Electron-Mobility Transistors (HEMTs). The analytical evaluation of band bap energy, electron mobility, thermal conductivity and thermal resistance has been carried out. The...
At the vacuum-ultraviolet (VUV) beam line of a synchrotron, an end station for photoluminescence (PL) coupled to a system to detect absorption is used to investigate the luminescence and absorption of materials. We analyzed a CVD diamond window in wavelength range 160 250 nm at 300 and 14 K. The PL excited with VUV light enabled an identification of nitrogen defects in diamond samples. The VUV ...
P A P ER Abstract The broadband enhancement of single–photon emission from nitrogen-vacancy centers in nanodiamonds coupled to a planar multilayer metamaterial with hyperbolic dispersion is studied experimentally. The metamaterial is fabricated as an epitaxial metal/dielectric superlattice consisting of CMOS-compatible ceramics: titanium nitride (TiN) and aluminum scandium nitride (AlxSc1-xN). ...
This work encompasses the development of low-viscosity cyclic oligomer underfill formulations that cure without heat evolution. Boron nitride, silica-coated aluminum nitride, and alumina ceramic powders were used as fillers in cyclic butylene terephthalate oligomer melts. The melts were heated with a suitable catalyst to induce polymerization. The effects of the filler type and composition on t...
We report on a simulation for terahertz aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature by introducing deep-level defects into the polarized AlGaN/GaN/AlGaN quantum well. Results show that an evident degradation in negative-differential-resistance characteristic of RTD occurs when the defect density is higher than 10 cm , which is consis...
This article summarizes the most recent technological developments in the realization of integrated aluminum nitride (AlN) piezoelectric microelectromechanical system (MEMS) for radio frequency (rf) front ends to be employed in next generation wireless communication devices. The AlN-based resonator and switch technologies are presented, their principle of operation explained, and some key exper...
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