The title compound, [NiCl(2)(C(3)H(9)P)(3)], was obtained as a product of the reaction of [NiCl(2)(PMe(3))(2)] with an equivalent trimethyl-phosphine in diethyl ether. It easily loses trimethyl-phosphine at room temperature to give NiCl(2)(PMe(3))(2). There are two independent mol-ecules in the asymmetric unit, and their bond lengths and angles are similar. The Ni environment is trigonal bipyra...

In the crystal structure of the title complex, [Ni(C(5)H(8)NS(2))Cl(C(14)H(15)P)], the Ni atom is coordinated by an S,S'-chelating dithio-carbamate, a chloride and a diphenyl-ethyl-phosphine ligand in a distorted square-planar arrangement.

The title compound, [Ni(C(14)H(9))Cl(C(18)H(15)P)(2)], was synthesized from the reaction between 9-chloro-phenanthrene, NiCl(2)·6H(2)O and triphenyl-phosphane in ethanol. The bond angles around the Ni(II) atom indicate that it exists in a slightly distorted square-planar geometry.

To suppress Ag dewetting from around 200 <sup>o</sup>C in Ag-coated Cu (Cu@Ag) flakes, and Ni-coated (Cu@Ni@Ag) flakes were fabricated by successive Ni electroless plating. The bath type was an important consideration to induce differences the resultant oxidation. An acid contained succinic as a complexing agent sodium hypophosphite reductant, alkaline citrate hydroxide pH adjuster ...

An !-word p over a nite alphabet is called disjunctive if every nite word over occurs as a subword in p. A real number is called disjunctive to base a if it has a disjunctive a-adic expansion. For every pair of integers a; b 2 such that there exist numbers disjunctive to base a but not to base b we explicitly construct very simple examples of such numbers. General versions of the following resu...

The zirconia stabilized by 3mol % Y2O3 (3YSZ) was applied onto the surface of the magnesium alloy AZ91D using electrophoretic deposition (EPD) from a non- aqueous solution. A Ni-P interlayer between the substrate and YSZ coating was also prepared by electroless plating. Finally, coatings were heat treated in control atmosphere at 400 °C. The preparation, microstructure and corrosion resistance ...

The results of studies on the development technological methods for formation low-resistivity contact systems to n- and p-SiC based single multilayer Ni-, Al- Ti-compositions 4H-SiC bipolar devices are presented. It is shown that contacts Ni n-4H-SiC (rho c =3.6·10 -4 Ohm·cm 2 ) Ni/Al p-4H-SiC =5.9·10 -5 possible within a cycle vacuum annealing at 1000 o C 120 s. This solution makes it reduce n...