We study the electronic and transport properties of two novel molecular wires made of atomic chains of carbon atoms (polyynes) capped with either benzene-thiols or pyridines. While both molecules are structurally similar, the electrical conductance of benzene-thiol-capped chains attached to gold electrodes is found to be much higher than that of pyridine-capped chains. We predict that the condu...

We demonstrate a new type of velocity modulation transistor (VMT) with an InGaAs dual channel structure fabricated on an InP (001) substrate. The dual channel structure consists of a high mobility 10 nm In0.53Ga0.47As quantum well, a 2 nm In0.52Al0.48As barrier layer, and a low mobility 1 nm In0.26Ga0.74As quantum well. The VMTs have a negative differential resistance (NDR) effect with a low so...

In this study, the negative differential resistance (NDR) phenomenon in two-terminal devices composed of pyrogallol-formaldehyde/ZrO2 composite materials is investigated. It demonstrated that NDR caused by electrothermal effects, which can be observed through dependence on both voltage and temperature. Additionally, it showed peak current peak/valley voltages effectively modulated using electri...

We present a systematic analysis of electron transport characteristics for one-dimensional heterojunctions with two multi-nitrogen-doped (multi-N-doped) capped carbon nanotubes (CNTs) facing one another at different numbers of nitrogen atoms and conformations. Our results show that the modification of the molecular orbitals by the nitrogen dopants generates conducting channels in the designed h...

We consider magnetic flux moving in superconductors with periodic pinning arrays. We show that sample heating by moving vortices produces negative differential resistivity (NDR) of both N and S type (i.e., N- and S-shaped) in the voltage-current characteristic (VI curve). The uniform flux flow state is unstable in the NDR region of the VI curve. Domain structures appear during the NDR part of t...

Abstract The transport properties of molecular wire comprising B 40 fullerene are investigated by employing density functional theory (DFT) and non-equilibrium green’s function (NEGF) methodology. quantum is evaluated calculating the states, transmission spectra at various bias voltages, energy spectra, HOMO-LUMO gap, current–voltage curve, pathways. In context to its properties, results show t...

Resistive Random-Access Memory Devices Neuromorphic devices are essential for beyond von-Neumann computing and Random Access Memories (RRAMs) the backbone it. In article number 2200744, Chandra Prakash colleagues show RRAM characteristics in a Bi12FeO20 system first time, together with negative differential resistance (NDR) write once read many (WORM) like simultaneously. It is hoped this could...

Two terminal metal–oxide–metal devices based on niobium oxide thin films exhibit a wide range of non-linear electrical characteristics that have applications in hardware-based neuromorphic computing. In this study, we compare the threshold-switching and current-controlled negative differential resistance (NDR) cross-point fabricated from undoped Nb2O5 Ti-doped show doping offers an effective me...

Pankaj Sharma, Laurent Syavoch Bernard, Antonios Bazigos, Arnaud Magrez and Adrian M. Ionescu École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland [email protected] Abstract Negative differential resistance (NDR) is a phenomenon in which an increase in voltage across the device's terminals results in a decrease in electric current through it. This is in contrast to a resist...

Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous circuits, including memristors. Several physical origins have been proposed to lead the NDR phenomena semiconductor devices over last more than half a century. Here, we report behavior formation randomly oriented graphenelike nanostructures up 37 K and high on-current density ${10}^{5}\pha...