Nanocrystalline CdS thin films were grown on glass substrates by a thermal evaporation method in a vacuum of about 2 × 10-5 Torr at substrate temperatures ranging between 25 °C and 250 °C. The physical properties of the layers were analyzed by transmittance spectra, XRD, SEM, and four-point probe measurements, and exhibited strong dependence on substrate temperature. The XRD patterns of the fil...

Articles you may be interested in Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide Mechanis...

In this paper we present a study of boron-doped nc-Si:H films prepared by PECVD at high deposition pressure ( 4 mbar), high plasma power and low substrate temperature ( 200 C) using trimethylboron (TMB) as a dopant gas. The influence of deposition parameters on electrical, structural and optical properties is investigated. We determine the deposition conditions that lead to the formation of p-t...

The grain coarsening in dense nanocrystalline gadolinia-doped ceria (CGO) and CeO2 was studied for the grain size regime from 10 to 250 nm. Dense ceria-based thin films were prepared by spray pyrolysis and pulsed laser deposition on sapphire substrates. The small grain-sized CGO and CeO2 microstructures were surprisingly stable and showed self-limited grain growth and relaxation of the microstr...

We study the structural and electrical properties of intrinsic layers growth close to the transition between amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) deposited on glass and PEN without intentional heating. These samples showed different behaviour in Raman shift and XRD spectra when compared with that of samples deposited at 200oC. Electrical properties of these films als...

WaSiaN films were deposited by reactive sputtering in a N2+Ar atmosphere from a W target incrusted with different number of Si pieces. The coatings present different crystallographic structures from the crystalline a-W and W2N to amorphous phase. Crystalline films have very low grain sizes from 15 down to 3 nm. For WaSi films there is a good correlation between the increase of the hardness and ...

We report annealing studies of thin films of GaN and GaN:O prepared by ion assisted deposition. As-prepared films of stoichiometric tetrahedrally bonded GaN form nanocrystalline networks, but amorphous networks result with the inclusion of more than 10 at.% of oxygen. The annealed nc-GaN films show an increased average crystallite size, though even after a 700 C anneal the crystals are no large...

The main aim of the NIRT project is to synthesize, characterize and model the nanocrystalline diamond thin films to utilize its extraordinary properties in various applications such as biomedical devices, MEMS structures and RF-MEMS devices. The research focus is in the following areas: (i) Synthesis and Processing of Nanocrystalline Diamond Films by Microwave Plasma Enhanced CVD: The primary o...