It is necessary to generate the automorphism group of a chemical graph in computer-aided structure elucidation. An Euclidean graph associated with a molecule is defined by a weighted graph with adjacency matrix M = [dij], where for i≠j, dij is the Euclidean distance between the nuclei i and j. In this matrix dii can be taken as zero if all the nuclei are equivalent. Otherwise, one may introduce...

in this paper, nano fibers (engelhard corporation titanosilicate number 10 / polyacrylonitrile) ets-10 / pan, as a composite exchanger to absorb heavy metals, were synthesized and optimized. several parameters were affected on this absorption. results show that the optimization sizes of the nano fibers are about 75 nanometers. structures were analyzed by scanning electron microscope (sem) and e...

This paper presents actually work from development of mechatronic handling devices able to accomplish certain microand/or nano operation tasks. Piezo ceramic structures with (3,1)-piezoelectric effect integrated into the mechatronic system will be used an actuation element. The subject of this paper is structures with more than 1 degrees of freedom appropriate for different microand nano-applic...

Lithium niobate (LiNbO3) is used in applications such as in optoelectronics, surface acoustic wave devices and transducers. In this paper nano-patterning of LiNbO3 wafers at the wafer scale is investigated using a novel low cost and large-area nano-imprinting technique. The formation of nano-scale pillars is presented by nano-imprinting an ordered nickel etch mask by lift-off on a y-cut LiNbO3 ...

Titanium dioxide (TiO2) micro and nano architectures have been intensively studied in 15 the past years because of many varied applications in environmental, energy conversion, and 16 storage fields, such as heterogeneous catalysis, dye-sensitized solar cells, lithium/sodium ion 17 batteries, lithium-sulfur (Li-S) batteries, and bio-nanotechnology, etc. Especially the surface and 18 interface s...

Highly nonlinear bistable current-voltage (I-V) characteristics are necessary in order to realize high density resistive random access memory (ReRAM) devices that are compatible with cross-point stack structures. Up to now, such I-V characteristics have been achieved by introducing complex device structures consisting of selection elements (selectors) and memory elements which are connected in ...